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AWT6314RM23Q7

Description
Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, 3 X 5 MM, 1 MM HEIGHT, ROHS COMPLIANT, M23, 12 PIN
CategoryWireless rf/communication    Radio frequency and microwave   
File Size369KB,8 Pages
ManufacturerII-VI Incorporated
Environmental Compliance
Download Datasheet Parametric Compare View All

AWT6314RM23Q7 Overview

Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, 3 X 5 MM, 1 MM HEIGHT, ROHS COMPLIANT, M23, 12 PIN

AWT6314RM23Q7 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerII-VI Incorporated
Reach Compliance Codeunknown
Other featuresIT CAN ALSO OPERATE AT 1850 TO 1950 MHZ
Characteristic impedance50 Ω
structureCOMPONENT
Gain24 dB
Maximum input power (CW)10 dBm
JESD-609 codee3
Maximum operating frequency849 MHz
Minimum operating frequency824 MHz
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
RF/Microwave Device TypesNARROW BAND MEDIUM POWER
Terminal surfaceMatte Tin (Sn)
Maximum voltage standing wave ratio2
Base Number Matches1
Dual-band CDMA/PCS 3.4 V/28 dBm
Linear Power Amplifier Module
AWT6314R
Data Sheet - Rev 2.0
FEATURES
Single Mode Operation: P
OUT
+28 dBm
High Efficiency: 39 %
25 % Package Size Reduction
Common V
MODE
Control Line
Simplified V
CC
Bus PCB routing
Reduced External Component Count
Low Profile Surface Mount Package: 1.1 mm
RoHS Compliant Package, 250
o
C MSL-3
CDMA/EVDO Cell & PCS dual-band Wireless
Handouts and Data Devices
AW
T
631
4
APPLICATIONS
M23 Package
12 Pin 3 mm x 5 mm x 1 mm
Surface Mount Module
The AWT6314R meets the increasing demands for
higher levels of integration in dual-band CDMA/PCS
1X handsets, while reducing board area requirements
by 25 %. The package pinout was chosen to enable
handset manufacturers to easily route V
CC
to both
power amplifiers and simplify control with a common
V
MODE
pin. The device is manufactured on an advanced
InGaP HBT MMIC technology offering state-of-the-art
PRODUCT DESCRIPTION
reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, serve to increase handset
talk and standby time. The self contained 3 mm x 5 mm
x 1 mm surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50
system.
GND at
slug
(pad)
V
REF_PCS
1
Bias Control
12
RF
OUT_PCS
RF
IN_PCS
2
11
GND
V
CC1
3
V
MODE
4
10
V
CC2
9
V
CC2
A
RF
IN_CELL
5
Bias Control
8
RF
OUT_CELL
V
REF_CELL
6
7
GND
GND
Figure 1: Block Diagram
09/2008

AWT6314RM23Q7 Related Products

AWT6314RM23Q7 AWT6314RM23P9
Description Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, 3 X 5 MM, 1 MM HEIGHT, ROHS COMPLIANT, M23, 12 PIN Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, 5 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M23, 12 PIN
Is it Rohs certified? conform to conform to
Maker II-VI Incorporated II-VI Incorporated
Reach Compliance Code unknown unknown
Other features IT CAN ALSO OPERATE AT 1850 TO 1950 MHZ IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
Gain 24 dB 23.5 dB
Maximum input power (CW) 10 dBm 10 dBm
Maximum operating frequency 849 MHz 849 MHz
Minimum operating frequency 824 MHz 824 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -30 °C -30 °C
RF/Microwave Device Types NARROW BAND MEDIUM POWER NARROW BAND MEDIUM POWER
Maximum voltage standing wave ratio 2 2
Base Number Matches 1 1
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