CMPT6517 datasheet, PDF - EEWORLD Datasheet

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CMPT6517: DescriptionCOMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size97KB，2 Pages; ManufacturerCentral Semiconductor

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CMPT6517 Overview

COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

CMPT6517 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	40 MHz

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CMPT6517 NPN

CMPT6520 PNP

COMPLEMENTARY SILICON

HIGH VOLTAGE TRANSISTORS

Central

TM

Semiconductor Corp.

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT6517,

CMPT6520 types are complementary silicon

transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for high voltage driver and

amplifier applications.

MARKING CODE:

CMPT6517: C1Z

CMPT6520: C2Z

SYMBOL

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

TJ,Tstg

Θ

JA

-65 to +150

357

VCBO

VCEO

VEBO

IC

IB

PD

350

5.0

500

250

350

UNITS

V

mA

mW

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=250V

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

VEB=5.0V (CMPT6517)

VEB=4.0V (CMPT6520)

IC=100µA

IC=1.0mA

IE=10µA (CMPT6517)

IE=10µA (CMPT6520)

IC=10mA,

IC=20mA,

IC=30mA,

IC=50mA,

IC=10mA,

IC=20mA,

IB=1.0mA

IB=2.0mA

IB=3.0mA

IB=5.0mA

IB=1.0mA

IB=2.0mA

350

6.0

5.0

MAX

50

UNITS

nA

V

0.30

0.35

0.50

1.0

0.75

0.85

0.90

2.0

20

30

V

IC=30mA, IB=3.0mA

IC=10V, IC=100mA

VCE=10V, IC=1.0mA

VCE=10V, IC=10mA

R4 (26-September 2002)

CMPT6517 Related Products

	CMPT6517	CMPT6520
Description	COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS	COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	40 V	40 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	PNP
Maximum power dissipation(Abs)	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	40 MHz	40 MHz

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