CMPT6517 NPN
CMPT6520 PNP
COMPLEMENTARY SILICON
HIGH VOLTAGE TRANSISTORS
Central
TM
Semiconductor Corp.
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT6517,
CMPT6520 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high voltage driver and
amplifier applications.
MARKING CODE:
CMPT6517: C1Z
CMPT6520: C2Z
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ
JA
-65 to +150
357
VCBO
VCEO
VEBO
IC
IB
PD
350
350
5.0
500
250
350
UNITS
V
V
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=250V
IEBO
IEBO
BVCBO
BVCEO
BVEBO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
VEB=5.0V (CMPT6517)
VEB=4.0V (CMPT6520)
IC=100µA
IC=1.0mA
IE=10µA (CMPT6517)
IE=10µA (CMPT6520)
IC=10mA,
IC=20mA,
IC=30mA,
IC=50mA,
IC=10mA,
IC=20mA,
IB=1.0mA
IB=2.0mA
IB=3.0mA
IB=5.0mA
IB=1.0mA
IB=2.0mA
350
350
6.0
5.0
MAX
50
50
50
UNITS
nA
nA
nA
V
V
V
V
0.30
0.35
0.50
1.0
0.75
0.85
0.90
2.0
20
30
V
V
V
V
V
V
V
V
IC=30mA, IB=3.0mA
IC=10V, IC=100mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
R4 (26-September 2002)
Central
TM
Semiconductor Corp.
CMPT6517 NPN
CMPT6520 PNP
COMPLEMENTARY SILICON
HIGH VOLTAGE TRANSISTORS
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
hFE
VCE=10V, IC=30mA
30
hFE
hFE
fT
Ccb
Ceb
Ceb
VCE=10V,
VCE=10V,
IC=50mA
IC=100mA
20
15
40
MAX
200
200
200
6.0
80
100
UNITS
VCE=20V, IC=10mA, f=20MHz
VCB=20V, IC=0, f=1.0MHz
VEB=0.5V, IE=0, f=1.0MHz (CMPT6517)
VEB=0.5V, IE=0, f=1.0MHz (CMPT6520)
MHz
pF
pF
pF
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE:
CMPT6517: C1Z
CMPT6520: C2Z
R4 (26-September 2002)
京公网安备 11010802033920号
EEWORLD
