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P800B

Description
SILICON RECTIFIER DIODES
CategoryDiscrete semiconductor    diode   
File Size33KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

P800B Overview

SILICON RECTIFIER DIODES

P800B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
Maximum reverse current5 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
P800A - P800K
PRV : 50 - 800 Volts
Io : 8.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
SILICON RECTIFIER DIODES
D6
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
MECHANICAL DATA :
* Case : Void-free molded plastic body
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.1 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 50
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at I
F
= 8 A
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
P800A
P800B
P800D
P800G
P800J
P800K
UNIT
V
V
V
A
A
V
µA
mA
pF
°C/W
°C
°C
50
35
50
100
70
100
200
140
200
8.0
400
1.0
5.0
1.0
150
20
400
280
400
600
420
600
800
560
800
Typical junction capacitance at 4.0V, 1MHz
Typical Thermal Resistance (1)
Junction Temperature Range
Storage Temperature Range
- 50 to + 150
- 50 to + 150
Note :
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
P.C.B. mounted with 1.1” x 1.1” (30 x 30mm) copper pads
Page 1 of 2
Rev. 02 : March 25, 2005

P800B Related Products

P800B P800A P800D P800G P800K P800J
Description SILICON RECTIFIER DIODES SILICON RECTIFIER DIODES SILICON RECTIFIER DIODES SILICON RECTIFIER DIODES SILICON RECTIFIER DIODES SILICON RECTIFIER DIODES
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli compli compli compli compli
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V 1 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 400 A 400 A 400 A 400 A 400 A 400 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C
Maximum output current 8 A 8 A 8 A 8 A 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 100 V 50 V 200 V 400 V 800 V 600 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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