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PHKD13N03LT518

Description
MOSFET MOSFET N-CH TRENCH DL 30V
Categorysemiconductor    Discrete semiconductor   
File Size180KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PHKD13N03LT518 Overview

MOSFET MOSFET N-CH TRENCH DL 30V

PHKD13N03LT518 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Number of Channels2 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current6.6 A
Rds On - Drain-Source Resistance21 mOhms
ConfigurationDual
PackagingCut Tape
PackagingMouseReel
PackagingReel
Transistor Type2 N-Channel
Moisture SensitiveYes
NumOfPackaging3
Factory Pack Quantity2500
Unit Weight0.017870 oz
SO
PHKD13N03LT
Dual N-channel TrenchMOS logic level FET
Rev. 5 — 27 December 2011
Product data sheet
1. Product profile
1.1 General description
Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
8
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Simple gate drive required due to low
gate charge
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC convertors
Lithium-ion battery applications
Notebook computers
Portable equipment
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
25 °C; T
j
150 °C
T
sp
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
T
sp
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-
Typ
-
-
-
17
Max
30
10.4
3.57
20
Unit
V
A
W
mΩ
Static characteristics
drain-source on-state resistance V
GS
= 10 V; I
D
= 8 A; T
j
= 25 °C;
see
Figure 9;
see
Figure 10
gate-drain charge
V
GS
= 5 V; I
D
= 5 A; V
DS
= 15 V;
T
j
= 25 °C; see
Figure 11
Dynamic characteristics
Q
GD
-
3.9
-
nC
[1]
Single device conducting.
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