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PSMN4R5-40PS127

Description
MOSFET N-CH 40V 4.6 mOhm Standard MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size223KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PSMN4R5-40PS127 Overview

MOSFET N-CH 40V 4.6 mOhm Standard MOSFET

PSMN4R5-40PS127 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current100 A
Rds On - Drain-Source Resistance4.6 mOhms
ConfigurationSingle
Pd - Power Dissipation148 W
PackagingTube
Transistor Type1 N-Channel
Fall Time9 ns
NumOfPackaging1
Rise Time23 ns
Factory Pack Quantity1000
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time19 ns
Unit Weight0.211644 oz
PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET
Rev. 02 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC convertors
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
40
100
148
Unit
V
A
W
drain-source voltage T
j
25 °C; T
j
175 °C
drain current
total power
dissipation
gate-drain charge
Symbol Parameter
Dynamic characteristics
Q
GD
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 20 V; see
Figure 14;
see
Figure 15
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 13;
[1]
-
8.8
-
nC
Static characteristics
R
DSon
drain-source
on-state resistance
-
3.9
4.6
mΩ
[1]
Measured 3 mm from package.
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