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1N5819X0

Description
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41,
CategoryDiscrete semiconductor    diode   
File Size242KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric Compare View All

1N5819X0 Overview

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41,

1N5819X0 Parametric

Parameter NameAttribute value
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage40 V
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
CREAT BY ART
1N5817 - 1N5819
1.0AMP. Schottky Barrier Rectifiers
DO-41
Features
Low power loss, high efficiency
High current capability, Low VF
High reliability
High surge current capability
Exitaxial construction
Guard-ring for transient protection
For use in low voltage, high frequency inventor,
free wheeling, and polarity protection application
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: Molded plastic DO-41
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260℃/10 seconds/.375",(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 0.33 grams
Ordering Information (example)
Part No.
1N5817
Package
DO-41
Packing
3K / AMMO box
INNER
TAPE
52mm
Packing
code
A0
Green Compound
Packing code
A0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage
@1A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test With PW=300 usec, 1% Duty Cycle
(Note 1)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θJA
R
θJC
T
J
T
STG
1N5817
20
14
20
1N5818
30
21
30
1
30
1N5819
40
28
40
Units
V
V
V
A
A
0.45
0.550
1
10
55
100
45
- 65 to + 125
- 65 to + 150
0.600
V
mA
mA
pF
O
@ T
A
=25
@ T
A
=100
C/W
O
O
C
C
Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Version:D12

1N5819X0 Related Products

1N5819X0 1N5818X0 1N5818X0G 1N5819X0G 1N5817X0 1N5817X0G
Description Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41,
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code compli compli compli compli compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 40 V 30 V 30 V 40 V 20 V 20 V
surface mount NO NO NO NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Base Number Matches 1 1 1 1 - -
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