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IRGB4062DPBF

Description
48 A, 600 V, N-CHANNEL IGBT, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size953KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRGB4062DPBF Overview

48 A, 600 V, N-CHANNEL IGBT, TO-220AB

IRGB4062DPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-220AB
package instructionLEAD FREE PACKAGE-3
Contacts3
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)48 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)41 ns
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)250
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
Certification statusNot Qualified
Maximum rise time (tr)31 ns
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)164 ns
Nominal on time (ton)64 ns
PD - 97190
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 µS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (I
LM
)
Positive V
CE (ON)
Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
IRGB4062DPbF
IRGP4062DPbF
C
V
CES
= 600V
I
C
= 24A, T
C
= 100°C
G
E
t
SC
5µs, T
J(max)
= 175°C
n-channel
C
C
V
CE(on)
typ. = 1.65V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
E
C
G
TO-220AB
E
C
G
TO-247AC
G
Gate
C
Collector
Max.
600
48
24
96
96
48
24
96
±20
±30
250
125
-55 to +175
E
Emitter
Units
V
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
c
e
A
Continuous Gate-to-Emitter Voltage
V
W
°C
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
Thermal Resistance Junction-to-Case-(each Diode) TO-247AC
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.50
80
Max.
0.60
1.53
0.65
1.62
–––
–––
Units
°C/W
1
www.irf.com
02/24/06

IRGB4062DPBF Related Products

IRGB4062DPBF IRGP4062DPBF
Description 48 A, 600 V, N-CHANNEL IGBT, TO-220AB 48 A, 600 V, N-CHANNEL IGBT, TO-247AC
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-220AB TO-247AC
package instruction LEAD FREE PACKAGE-3 LEAD FREE PACKAGE-3
Contacts 3 3
Reach Compliance Code unknow unknow
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 48 A 48 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum landing time (tf) 41 ns 41 ns
Gate emitter threshold voltage maximum 6.5 V 6.5 V
Gate-emitter maximum voltage 20 V 20 V
JEDEC-95 code TO-220AB TO-247AC
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 250 250
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 250 W 250 W
Certification status Not Qualified Not Qualified
Maximum rise time (tr) 31 ns 31 ns
surface mount NO NO
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrie Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 164 ns 164 ns
Nominal on time (ton) 64 ns 64 ns
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刚从一个朋友那里听说的,某视频网站一位员工上班时间死在对面公司门口,据说死者刚到这个网站不久。具体死因不明,就知道该网站赔了20W。这个视频网站就是酷六透露社发来消息:上周,视频网站酷六一年轻员工因连续加班半年,疲劳过度,在岗位上吐血猝死。目前,酷六正在严密封锁消息。酷六创始人李善友,搞人力资源出身,在搜狐当总编辑的时候,便因给下属工作压力著称,自诩为鲁花压榨专家据说酷六网的公关现在忙疯了,正在严...
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