PD - 97190
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 µS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (I
LM
)
Positive V
CE (ON)
Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
IRGB4062DPbF
IRGP4062DPbF
C
V
CES
= 600V
I
C
= 24A, T
C
= 100°C
G
E
t
SC
≥
5µs, T
J(max)
= 175°C
n-channel
C
C
V
CE(on)
typ. = 1.65V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
E
C
G
TO-220AB
E
C
G
TO-247AC
G
Gate
C
Collector
Max.
600
48
24
96
96
48
24
96
±20
±30
250
125
-55 to +175
E
Emitter
Units
V
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
c
e
A
Continuous Gate-to-Emitter Voltage
V
W
°C
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
Thermal Resistance Junction-to-Case-(each Diode) TO-247AC
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.50
80
Max.
0.60
1.53
0.65
1.62
–––
–––
Units
°C/W
1
www.irf.com
02/24/06
IRGB/P4062DPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.30
1.60
2.03
2.04
—
-18
17
2.0
775
1.80
1.28
—
Max. Units
—
—
1.95
—
—
6.5
—
—
25
—
2.6
—
±100
nA
V
V
V
Conditions
V
GE
= 0V, I
C
= 100µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
f
Ref.Fig
CT6
CT6
5,6,7
9,10,11
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
I
C
= 24A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 24A, V
GE
= 15V, T
J
= 150°C
I
C
= 24A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 700µA
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
9, 10,
11, 12
gfe
I
CES
V
FM
I
GES
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
S V
CE
= 50V, I
C
= 24A, PW = 80µs
µA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
F
= 24A
I
F
= 24A, T
J
= 175°C
V
GE
= ±20V
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
50
13
21
115
600
715
41
22
104
29
420
840
1260
40
24
125
39
1490
129
45
Max. Units
75
20
31
201
700
901
53
31
115
41
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
ns
µJ
ns
µJ
nC
I
C
= 24A
V
GE
= 15V
V
CC
= 400V
Conditions
Ref.Fig
24
CT1
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200µH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
CT4
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200µH, L
S
= 150nH, T
J
= 25°C
CT4
I
C
= 24A, V
CC
= 400V, V
GE
=15V
R
G
=10Ω, L=100µH, L
S
=150nH, T
J
= 175°C
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200µH, L
S
= 150nH
T
J
= 175°C
fÃ
13, 15
CT4
WF1, WF2
14, 16
CT4
WF1
WF2
23
Energy losses include tail & diode reverse recovery
f = 1.0Mhz
T
J
= 175°C, I
C
= 96A
V
CC
= 480V, Vp =600V
Rg = 10Ω, V
GE
= +15V to 0V
4
CT2
FULL SQUARE
5
—
—
—
—
621
89
37
—
—
—
—
µs
µJ
ns
A
V
CC
= 400V, Vp =600V
Rg = 10Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 24A
V
GE
= 15V, Rg = 10Ω, L =200µH, L
s
= 150nH
22, CT3
WF4
17, 18, 19
20, 21
WF3
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100µH, R
G
= 10Ω.
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
2
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IRGB/P4062DPbF
50
45
40
35
Ptot (W)
250
200
150
100
50
0
300
30
IC (A)
25
20
15
10
5
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
0
20
40
60
80 100 120 140 160 180
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
100
10µsec
IC (A)
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
10000
1msec
DC
IC (A)
10
1
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
90
80
70
60
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
90
80
70
60
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
=15V
ICE (A)
ICE (A)
50
40
30
20
10
0
0
1
2
3
4
VCE (V)
5
50
40
30
20
10
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
7
8
0
1
2
3
4
VCE (V)
5
6
7
8
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
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3
IRGB/P4062DPbF
90
80
70
60
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
100
80
-40°c
25°C
175°C
ICE (A)
IF (A)
50
40
30
20
10
0
0
1
2
3
4
VCE (V)
5
6
7
8
60
40
20
0
0.0
1.0
VF (V)
2.0
3.0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
20
18
16
14
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
20
18
16
14
VCE (V)
10
8
6
4
2
0
5
10
VGE (V)
ICE = 24A
ICE = 48A
VCE (V)
12
ICE = 12A
12
10
8
6
4
2
0
ICE = 12A
ICE = 24A
ICE = 48A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
18
16
14
VCE (V)
ICE (A)
100
80
120
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 12A
TJ = 175°C
T J = 25°C
ICE = 24A
ICE = 48A
60
40
20
0
15
20
0
5
VGE (V)
10
15
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
4
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IRGB/P4062DPbF
1800
1600
1400
1200
Swiching Time (ns)
tdOFF
1000
Energy (µJ)
1000
800
600
400
200
0
0
10
EOFF
100
tdON
tF
10
tR
EON
1
20
30
IC (A)
40
50
60
10
20
30
IC (A)
40
50
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
1600
1400
1200
EOFF
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
1000
Energy (µJ)
1000
800
600
400
200
0
0
25
50
75
100
125
EON
Swiching Time (ns)
tdOFF
100
tdON
tF
tR
10
0
25
50
75
100
125
RG (Ω)
Rg (Ω)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
40
RG = 10Ω
35
30
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
45
40
35
IRR (A)
25
20
15
10
0
10
20
30
IF (A)
40
50
60
RG = 47Ω
RG = 100Ω
IRR (A)
RG = 22Ω
30
25
20
15
10
5
0
25
50
75
100
125
RG (Ω)
Fig. 17
- Typ. Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18
- Typ. Diode I
RR
vs. R
G
T
J
= 175°C
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