BUK9237-55A
N-channel TrenchMOS logic level FET
Rev. 3 — 9 November 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
55
32
77
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 15 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 15 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
-
-
28
31
33
37
mΩ
mΩ
NXP Semiconductors
BUK9237-55A
N-channel TrenchMOS logic level FET
Quick reference data
…continued
Parameter
Conditions
Min
-
Typ
-
Max Unit
76
mJ
Table 1.
Symbol
E
DS(AL)S
Avalanche ruggedness
non-repetitive
I
D
= 32 A; V
sup
≤
30 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 5 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge V
GS
= 5 V; I
D
= 15 A;
V
DS
= 44 V; T
j
= 25 °C;
see
Figure 13
Dynamic characteristics
Q
GD
-
9.2
-
nC
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT428 (DPAK)
[1]
It is not possible to make connection to pin 2 of the SOT428 package.
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9237-55A
DPAK
Description
plastic single-ended surface-mounted package (DPAK);
3 leads (one lead cropped)
Version
SOT428
Type number
BUK9237-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 9 November 2010
2 of 13
NXP Semiconductors
BUK9237-55A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 5 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 5 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
I
D
= 32 A; V
sup
≤
30 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
T
mb
= 25 °C; t
p
≤
10 µs; pulsed;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-15
-
-
-
-
-55
-55
-
-
-
Max
55
55
15
32
22
129
77
175
175
32
129
76
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
40
I
D
(A)
30
03nh71
120
P
der
(%)
80
03na19
20
40
10
0
0
25
50
75
100
125
150
175
200
T
mb
(°C)
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK9237-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 9 November 2010
3 of 13
NXP Semiconductors
BUK9237-55A
N-channel TrenchMOS logic level FET
10
3
I
D
(A)
10
2
03na99
t
p
= 10
μs
R
DSon
= V
DS
/ I
D
100
μs
10
DC
1 ms
10 ms
100 ms
1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see
Figure 4
Min
-
-
Typ
-
71.4
Max
1.94
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
δ
= 0.5
0.2
0.1
10
−1
0.05
0.02
P
03nb00
δ
=
t
p
T
Single Shot
10
−2
10
−6
10
−5
10
−4
10
−3
10
−2
t
p
T
t
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9237-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 9 November 2010
4 of 13
NXP Semiconductors
BUK9237-55A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 0 V; V
GS
= 10 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -10 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 15 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 15 A; T
j
= 175 °C;
see
Figure 11;
see
Figure 12
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 11;
see
Figure 12
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
measured from drain to centre of die
measured from source lead to source
bond pad
I
S
= 15 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
Min
55
50
1
-
0.5
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.05
-
2
2
-
-
28
31
Max
-
-
2
2.3
-
10
500
100
100
38
74
33
37
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
I
D
= 15 A; V
DS
= 44 V; V
GS
= 5 V;
T
j
= 25 °C; see
Figure 13
-
-
-
-
-
-
17.6
2.9
9.2
927
151
96
6
36
95
73
2.5
7.5
-
-
-
1236
181
131
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
-
-
-
-
-
-
Source-drain diode
V
SD
t
rr
Q
r
BUK9237-55A
-
-
-
0.85
42
83
1.2
-
-
V
ns
nC
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 9 November 2010
5 of 13
51mcu
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