July 2003
AO4609
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4609 uses advanced trench
technology MOSFETs to provide
excellent R
DS(ON)
and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications.
Features
n-channel
p-channel
-30V
V
DS
(V) = 30V
I
D
= 8.5A
-3A
R
DS(ON)
R
DS(ON)
< 18mΩ (V
GS
=10V)
< 130mΩ (V
GS
= 10V)
< 28mΩ (V
GS
=4.5V)
< 180mΩ (V
GS
= 4.5V)
< 260mΩ (V
GS
= 2.5V)
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
G2
S2
G1
S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
Max n-channel
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Max p-channel
-30
±12
-3
-2.4
-6
2
1.28
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
8.5
6.6
40
2
1.28
-55 to 150
W
°C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
56
81
40
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
62.5 °C/W
110 °C/W
48 °C/W
AO4609
N-Channel Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6A
Forward Transconductance
V
DS
=5V, I
D
=8.5A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
T
J
=125°C
1
30
15.5
22.3
23
23
0.75
18
27
28
1
3
1040
180
110
0.7
19.2
9.36
2.6
4.2
5.2
4.4
17.3
3.3
16.7
6.7
1.8
Min
30
1
5
100
3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
R
g
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
V
GS
=10V, V
DS
=15V, I
D
=8.5A
V
GS
=10V, V
DS
=15V, R
L
=1.8Ω,
R
GEN
=3Ω
I
F
=8.5A, dI/dt=100A/µs
I
F
=8.5A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4609
P-Channel Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-3A
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-4.5V, I
D
=-2A
V
GS
=-2.5V, I
D
=-1A
V
DS
=-5V, I
D
=-3A
-0.6
-10
102
154
128
3
187
4.5
-0.85
130
200
180
260
-1
-2
-1
Min
-30
-1
-5
±100
-1.4
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
409
55
42
12
4.4
0.8
1.32
5.3
4.4
31.5
8
15.8
8
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
V
GS
=-4.5V, V
DS
=-15V, I
D
=-3A
V
GS
=-10V, V
DS
=-15V, R
L
=5Ω,
R
GEN
=3Ω
I
F
=-3A, dI/dt=100A/µs
I
F
=-3A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4609
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
28
Normalized On-Resistance
26
24
R
DS(ON)
(m
Ω
)
22
20
18
16
14
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
1.0E+01
1.0E+00
40
R
DS(ON)
(m
Ω
)
I
D
=8.5A
I
S
(A)
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
20
25°C
1.0E-04
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
V
GS
=10V
V
GS
=4.5V
1.6
V
GS
=10V
1.4
I
D
=8.5A
V
GS
=4.5V
1.2
4V
10V
4.5V
3.5V
1.20E+01
I
D
(A)
125°C
8.00E+00
V
GS
=3V
4.00E+00
0.00E+00
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
2.00E+01
1.60E+01
V
DS
=5V
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
30
125°C
10
Alpha & Omega Semiconductor, Ltd.
AO4609
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1500
V
DS
=15V
I
D
=8.5A
Capacitance (pF)
1250
C
iss
1000
750
500
250
0
0
C
rss
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
100.0
R
DS(ON)
limited
1ms
10ms
0.1s
100µs
10µs
Power (W)
50
40
30
20
10
0
0.001
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
10.0
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
1s
10s
DC
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/(T
on
+T
off
)
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
off
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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