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AO4609

Description
Complementary Enhancement Mode Field Effect Transistor
File Size272KB,12 Pages
ManufacturerETC
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AO4609 Overview

Complementary Enhancement Mode Field Effect Transistor

July 2003
AO4609
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4609 uses advanced trench
technology MOSFETs to provide
excellent R
DS(ON)
and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications.
Features
n-channel
p-channel
-30V
V
DS
(V) = 30V
I
D
= 8.5A
-3A
R
DS(ON)
R
DS(ON)
< 18mΩ (V
GS
=10V)
< 130mΩ (V
GS
= 10V)
< 28mΩ (V
GS
=4.5V)
< 180mΩ (V
GS
= 4.5V)
< 260mΩ (V
GS
= 2.5V)
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
G2
S2
G1
S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
Max n-channel
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Max p-channel
-30
±12
-3
-2.4
-6
2
1.28
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
8.5
6.6
40
2
1.28
-55 to 150
W
°C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
56
81
40
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
62.5 °C/W
110 °C/W
48 °C/W

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