Ordering number : ENN7177
CPH5905
NPN Epitaxial Planar Silicon Transistor
N-Channel Silicon Junction FET
CPH5905
High-Frequency Amplifier, AM Amplifier,
Low-Frequency Amplifier Applications
Features
•
Package Dimensions
unit : mm
2196
[CPH5905]
2.9
5
4
3
0.6
0.2
•
•
Composite type with J-FET and NPN transistors
contained in the CPH5 package, improving the
mounting efficiency greatly.
The CPH5905 contains a 2SK3557-equivalent chip
and a 2SC4639-equivalent chip in one package.
Drain and emitter are shared.
0.15
1
0.95
2
0.4
0.6
1.6
2.8
0.05
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
0.2
0.4
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
[FET]
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
[Common Ratings]
Total Dissipation
Junction Temperature
Storage Temperature
PT
Tj
Tstg
300
150
--55 to +150
mW
°C
°C
VCBO
VCEO
VEBO
IC
ICP
IB
PC
55
50
6
150
300
30
200
V
V
V
mA
mA
mA
mW
VDSX
VGDS
IG
ID
PD
15
-
-15
10
50
200
V
V
mA
mA
mW
Symbol
Conditions
Ratings
Unit
Marking : 1E
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22802 TS IM TA-3495 No.7177-1/5
0.7
0.9
CPH5905
Electrical Characteristics
at Ta=25°C
Parameter
[FET]
Gate-to-Drain Breakdown Voltage`
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Rank
G
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
H
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=10mA
VCB=6V, f=1MHz
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
55
50
6
0.15
0.75
0.20
135
200
1.7
0.08
0.8
0.4
1.0
0.1
0.1
400
MHz
pF
V
V
V
V
V
µs
µs
µs
µA
µA
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs
Ciss
Crss
NF
IG=-
-10µA, VDS=0
VGS=--10V, VDS=0
VDS=5V, ID=100µA
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
--15
--1.0
--0.4
10.0*
24
35
10.0
2.9
1.0
--0.7
--1.5
32.0*
V
nA
V
mA
mS
pF
pF
dB
Symbol
Conditions
Ratings
min
typ
max
Unit
* : The CPH5905 is classified by IDSS as follows : (unit : mA)
IDSS
10.0 to 20.0
16.0 to 32.0
The specifications shown above are for each individual FET or a transistor.
Electrical Connection
(Top view)
B
E/D
S
Switching Time Test Circuit
PC=20µs
D.C.≤1%
INPUT
50Ω
IB1
OUTPUT
IB2
1kΩ
VR
+
220µF
VBE= --5V
+
470µF
VCC=20V
RL
2kΩ
C
G
10IB1= --10IB2=IC=10mA
20
ID -- VDS
[FET]
20
ID -- VDS
VGS=0
[FET]
16
Drain Current, ID -- mA
Drain Current, ID -- mA
V GS=0
16
--0.1V
12
12
--0.1V
--0.2V
--0.2V
8
8
--0.3V
--0.3V
4
--0.4V
--0.7V
4
--0.4V
--0.6V
1.2
--0.5V
0
1.6
2.0
2.4
ITR02749
0
2
--0.7V
4
6
--0.5V
--0.6V
8
10
12
ITR02750
0
0
0.4
0.8
Drain-to-Source Voltage, VDS -- V
Drain-to-Source Voltage, VDS -- V
No.7177-2/5
CPH5905
22
20
18
ID -- VGS
VDS=5V
[FET]
16
14
ID -- VGS
VDS=5V
IDSS=15mA
[FET]
Drain Current, ID -- mA
Drain Current, ID -- mA
16
14
12
10
8
6
4
12
10
8
6
4
2
ID
SS =
30
mA
20
m
15
A
mA
10
mA
25
°
C
--1.0
--0.8
--0.6
--0.4
2
0
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0.2
IT04224
0
--1.2
--0.2
0
0.2
Gate-to-Source Voltage, VGS -- V
7
y
fs -- ID
Gate-to-Source Voltage, VGS -- V
100
25
°
C
Ta
=--
75
°
C
[FET]
y
fs -- IDSS
ITR02752
Forward Transfer Admittance,
yfs
-- mS
5
30m
3
2
A
Forward Transfer Admittance,
yfs
-- mS
VDS=5V
f=1kHz
m
=15
SS
ID
A
7
[FET]
VDS=5V
VGS=0
f=1kHz
5
10
7
5
3
2
3
2
3
5
7
1.0
2
3
5
7
10
2
3
5
10
7
10
2
3
5
IT04226
Drain Current, ID -- mA
3
IT04225
Drain Current, IDSS -- mA
3
VGS(off) -- IDSS
[FET]
Ciss -- VDS
[FET]
VDS=5V
ID=100µA
Cutoff Voltage, VGS(off) -- V
Input Capacitance, Ciss -- pF
2
2
VGS=0
f=1MHz
1.0
10
7
7
5
5
3
7
10
2
3
5
IT04227
3
7
1.0
2
3
5
7
10
2
3
Drain Current, IDSS -- mA
10
Drain-to-Source Voltage, VDS -- V
10
IT04228
Crss -- VDS
Reverse Transfer Capacitance, Crss -- pF
7
5
[FET]
VDS=0
f=1MHz
NF -- f
8
[FET]
VDS=5V
ID=1mA
Rg=1kΩ
Noise Figure, NF -- dB
2
3
5
7
2
3
6
2
4
1.0
7
5
7
1.0
10
3
2
0
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain-to-Source Voltage, VDS -- V
IT04229
Frequency, f -- kHz
5 7100
ITR02758
No.7177-3/5
CPH5905
10
NF -- Rg
[FET]
Allowable Power Dissipation, PD -- mW
8
VDS=5V
ID=1mA
f=1kHz
240
PD -- Ta
[FET]
200
Noise Figure, NF -- dB
160
6
120
4
80
2
40
0
0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
2 3
Signal Source Resistance, Rg -- kΩ
50
45
5 71000
ITR02759
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
12
ITR02760
IC -- VCE
50
0
µ
A
4
A
50
µ
[TR]
350
µ
A
300
µ
A
200
µ
A
IC -- VCE
50
µ
A
45µA
40µA
35µA
[TR]
400
µ
A
Collector Current, IC -- mA
35
30
25
20
15
10
5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Collector Current, IC -- mA
40
10
250
µ
A
8
150
µ
A
100µA
6
30µA
25µA
20µA
15µA
10µA
5µA
IB=0
0
5
10
15
20
25
30
35
40
45
50
4
50µA
IB=0
0.8
0.9
1.0
2
0
Collector-to-Emitter Voltage, VCE -- V
160
140
ITR10376
Collector-to-Emitter Voltage, VCE -- V
2
ITR10377
IC -- VBE
[TR]
VCE=6V
hFE -- IC
[TR]
VCE=6V
1000
Collector Current, IC -- mA
DC Current Gain, hFE
120
100
80
60
7
5
3
2
Ta=75°C
25°C
--25°C
Ta=75
°
C
25
°
C
--25
°
C
40
20
0
0
0.2
0.4
100
7
5
3
0.1
0.6
0.8
1.0
1.2
1.4
2
3
5
1.0
2
3
5
10
2
3
5
Base-to-Emitter Voltage, VBE -- V
7
ITR10378
Collector Current, IC -- mA
5
100 2 3
ITR10379
f T -- IC
[TR]
VCE=6V
Input Capacitance, Cib -- pF
Cib -- VEB
[TR]
f=1MHz
Gain-Bandwidth Product, fT -- MHz
5
3
3
2
2
10
7
5
100
7
5
3
2
3
2
1.0
1.0
2
3
5
7
10
2
3
5
7
Collector Current, IC -- mA
2
100
ITR10380
5
7
1.0
2
3
5
Emitter-to-Base Voltage, VEB -- V
10
ITR10381
7
No.7177-4/5
CPH5905
5
3
Cob -- VCB
[TR]
f=1MHz
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
1.0
7
5
3
2
0.1
7
5
3
VCE(sat) -- IC
[TR]
IC / IB=10
Output Capacitance, Cob -- pF
2
10
7
5
3
2
1.0
7
5
5
7
1.0
2
3
5
7
10
2
3
5
100
ITR10382
7
5
°
C
Ta=7
°
C
--25
2
3
5
7
10
2
3
25
°
C
2
1.0
5
7
Collector-to-Base Voltage, VCB -- V
10
VBE(sat) -- IC
Collector Current, IC -- mA
250
2
100
ITR10383
[TR]
IC / IB=10
Collector Dissipation, PC -- mW
PC -- Ta
[TR]
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
7
5
200
3
2
150
100
1.0
7
5
3
1.0
Ta= --25
°C
75
°C
25
°
C
50
0
2
3
5
7
10
2
3
5
7
Collector Current, IC -- mA
2
100
ITR10384
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR10385
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2002. Specifications and information herein are subject
to change without notice.
PS No.7177-5/5
京公网安备 11010802033920号
EEWORLD
