2SD882
NPN MEDIUM POWER TRANSISTOR
Features
■
■
■
HIGH CURRENT
LOW SATURATION VOLTAGE
COMPLEMENT TO 2SB772
Applications
■
■
■
■
■
VOLTAGE REGULATION
RELAY DRIVER
GENERIC SWITCH
AUDIO POWER AMPLIFIER
DC-DC CONVERTER
3
2
1
SOT-32
(TO-216)
Description
The device is a NPN transistor manufactured by
using planar Technology resulting in rugged high
performance devices. The complementary PNP
type is 2SB772.
Internal Schematic Diagram
Order Codes
Part Number
2SD882
Marking
D882
Package
SOT-32
Packing
TUBE
September 2005
Rev 2
1/9
www.st.com
9
1 Absolute Maximum Ratings
2SD882
1
Table 1.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
T
STG
T
J
Absolute Maximum Ratings
Absolute Maximum Rating
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Collector-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
P
< 5ms)
Base Current
Base Peak Current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Storage Temperature
Max. Operating Junction Temperature
Value
60
30
5
3
6
1
2
12.5
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
Table 2.
Symbol
R
thJ-case
Thermal Data
Parameter
Thermal Resistance Junction-Case____________________Max
Value
10
Unit
°C/W
2/9
2SD882
2 Electrical Characteristics
2
Table 3.
Symbol
I
CES
I
CEO
I
EBO
Electrical Characteristics
Electrical Characteristics
(T
CASE
= 25°C; unless otherwise specified)
Parameter
Collector Cut-off Current
(V
BE
= 0)
Collector Cut-off Current
(I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= 60 V
V
CE
= 30 V
V
EB
= 5 V
Min.
Typ.
Max.
10
100
10
Unit
µA
µA
µA
Collector-Emitter Breakdown
V
(BR)CEO
Voltage
Note: 1
(I
B
= 0 )
Collector-Base Breakdown
V
(BR)CBO
Voltage
(I
E
= 0 )
V
(BR)EBO
V
CE(sat)
Note: 1
V
BE(sat)
Note: 1
I
C
= 10 mA
30
V
I
C
= 100 µA
60
V
Emitter-Base Breakdown Voltage
I
E
= 100 µA
(I
C
= 0 )
Collector-Emitter Saturation
Voltage
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
B
= 50 mA
I
B
= 100 mA
I
B
= 150 mA
I
B
= 100 mA
V
CE
= 2 V
V
CE
= 2 V
V
CE
= 2 V
V
CE
= 10 V
5
0.4
0.7
1.1
1.2
100
80
30
100
300
V
V
V
V
V
Base-Emitter Saturation Voltage I
C
= 2 A
I
C
= 100 mA
hFE
DC Current Gain
I
C
= 1 A
I
C
= 3 A
I
C
= 0.1 A
fT
Transition Frequency
MHz
Note: 1 Pulsed duration = 300
μ
s, duty cycle
≤
1.5%.
3/9
2 Electrical Characteristics
2SD882
2.1
Typical characteristics
Reverse biased area
Figure 2.
DC current gain
Figure 1.
Figure 3.
Collector-emitter saturation voltage Figure 4.
Base-emitter saturation voltage
4/9
2SD882
3 Package Mechanical Data
3
Package Mechanical Data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
5/9
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