UNISONIC TECHNOLOGIES CO., LTD
N5027
HIGH VOLTAGE AND HIGH
RELIABILITY NPN
TRANSISTOR
FEATURES
* High Voltage (V
CEO
= 800V)
* High Speed Switching
* Wide SOA
NPN SILICON TRANSISTOR
1
TO-220
1
TO-220F
*Pb-free plating product number: N5027L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
N5027-x-TA3-F-T
N5027L-x-TA3-F-T
N5027-x-TF3-F-T
N5027L-x-TF3-F-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
N5027L-x-TA3-F-T
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1) T: Tube
(2) refer to Pin Assignment
(3) TA3: TO-220, TF3: TO-220F
(4) x: refer to Classificationof h
FE1
(5) L: Lead Free Plating Blank: Pb/Sn
,
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R203-032,A
N5027
ABSOLUTE MAXIMUM RATINGS
(Tc = 25℃)
PARAMETER
NPN SILICON TRANSISTOR
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
850
V
Collector-Emitter Voltage
V
CEO
800
V
Collector-Emitter Voltage
V
EBO
7
V
Peak Collector Current
I
C
3
A
Collector Current (Pulse)
I
CP
10
A
Base Current
I
B
1.5
A
Peak Collector Consume Dissipation
P
C
50
W
℃
Peak Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
C
= 25℃, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
=1mA, I
E
=0
BV
CEO
I
C
=5mA, I
B
=0
BV
EBO
I
E
=1mA, I
C
=0
I
C
=1.5A, I
B1
= -I
B2
=0.3A
V
CEX(SUS)
L=2mH, Clamped
I
CBO
V
CB
=800V, I
E
=0
I
EBO
V
EB
=5V, I
C
=0
h
FE 1
V
CE
=5V, I
C
=0.2A
h
FE 2
V
CE
=5V, I
C
=1A
V
CE (SAT)
I
C
=1A, I
B
=0.3A
V
BE (SAT)
I
C
=1.5A, I
B
=0.3A
Cob
V
CB
=10V, f=1MHz, I
E
=0
f
T
V
CE
=10V, I
C
=0.2A
t
ON
V
CC
=400V
I
C
=5I
B1
= -2.5I
B2
=2A
t
STG
R
L
=200Ω
t
F
MIN
850
800
7
800
10
10
40
1.1
1.5
60
15
0.5
3
0.3
TYP
MAX
UNIT
V
V
V
V
μA
μA
10
6
V
V
pF
MHz
μs
μs
μs
CLASSIFICATION of h
FE1
RANK
RANGE
N
10 ~ 20
R
15 ~ 30
O
20 ~ 40
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■
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Static Characteristic
Collector Current vs. Collector-Emitter Voltage
4.0
3.6
Collector Current, I
C
(A)
DC Current Gain vs. Collector Current
1000
V
CE
=5V
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
1
2
3
4
5
6
7
8
I
B
=10mA
I
B
=50mA
I
B
=150 mA
I
B
=100 mA
DC Current Gain, h
FE
100
10
9
10
1
0.01
100us
0.1
1ms
1
10
Collector-Emitter Voltage, V
CE
(V)
Collector Current, I
C
(A)
Saturation Voltage vs. Collector Current
10
Saturation Voltage, V
CE(SAT)
(V)
Collector Current vs. Base-Emitter Voltage
4.0
Ic=5I
B
3.5
Collector Current, Ic (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.01
0.01
100us
0.1
1ms
1
10
0.0
0.0
0.2
0.4
0.6
0.8
V
CE
=5V
1
0.1
1.0
1.2
Collector Current, I
C
(A)
Base-Emitter Voltage, V
BE
(V)
Switching Time
Time vs. Collector-Emitter Voltage
10
Vcc=400V
5.I
B
1= - 2.5.I
B
2=Ic
Safe Operating Area
Collector Current vs. Collector-Emitter Voltage
100
IcMAX.(Pulse)
TIME, t
ON
, t
stg
, t
F
(μs)
10
Collector Current, Ic (A)
IcMAX.(Continuous )
ms
10
s
0
μ
10
s
1m
1
1
C
D
0.1
0.1
0.01
0.01
0.1
1ms
1
Collector-Emitter Voltage, V
CE
(V)
10
1E-s
1
10
100
1000
10000
Collector-Emitter Voltage, V
CE
(V)
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TYPICAL CHARACTERISTICS(Cont.)
Reverse Operating Area
Collector Current vs. Collector-Emitter Voltage
100
I
B
2=-0.3A
NPN SILICON TRANSISTOR
Power Derating
Power Dissipation vs. Case Temperature
80
70
10
Power Dissipation, Pc (W)
100us
100
1ms
1000
10000
Collector Current, Ic (A)
60
50
40
30
20
10
1
0.1
0.01
10
0
0
25
50
75
100
125
150 175
Collector-Emitter Voltage, V
CE
(V)
Case Temperature, T
C
(℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-032,A
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