UTC D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
*Collector current up to 5A
* D965SS : Collector-Emitter voltage up to 20 V
* D965ASS : Collector-Emitter voltage up to 30 V
2
1
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
3
MARKING
(D965SS)
MARKING
(D965ASS)
SOT-23
D65
D65A
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage
Collector-emitter voltage
D965SS
D965ASS
Emitter-base voltage
Collector dissipation(Ta=25°C
)
Collector current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
RATING
40
20
30
7
750
5
150
-65 ~ +150
UNIT
V
V
V
mW
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
D965SS
D965ASS
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
TEST CONDITIONS
Ic=100µA,I
E
=0
Ic=1mA,I
B
=0
MIN
40
20
30
7
TYP
MAX
UNIT
V
V
V
nA
nA
I
E
=10µA,Ic=0
V
CB
=10V,I
E
=0
V
EB
=7V,Ic=0
100
100
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-016,B
UTC D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
DC current gain(note)
h
FE
V
CE
=2V,Ic=1mA
V
CE
=2V,Ic=0.5A
V
CE
=2V,Ic=2A
200
230
150
800
PARAMETER
Collector-emitter saturation voltage
Current gain bandwidth product
Output capacitance
SYMBOL
V
CE
(sat)
f
T
Cob
TEST CONDITIONS
Ic=3A, I
B
= 0.1A
V
CE
=6V,Ic=50mA
V
CB
=20V,I
E
=0
f=1MHz
MIN
TYP
150
MAX
1
50
UNIT
V
MHz
pF
CLASSIFICATION OF hFE2
RANK
RANGE
Q
230-380
R
340-600
S
560-800
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
3.0
Fig.2 DC current Gain
3
10
4
10
Fig.3 Base-Emitter on Voltage
I
B
=3.0mA
I
B
=2.5mA
I
B
=2.0mA
Ic,Collector current (A)
H
FE
, DC current Gain
2.5
Ic,Collector current (mA)
V
CE
=2V
3
10
2
10
2.0
I
B
=1.5mA
I
B
=1.0mA
I
B
=0.5mA
V
CE
=2V
1.5
1
10
2
10
1.0
0
0
0.4
0.8
1.2
1.6
2.0
0
10
-1
10
1
10
2
10
3
10
4
10
1
10
0
0.2
0.4
0.6
0.8
1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4
10
3
10
Fig.5 Current gain-bandwidth
product
3
10
Fig.6 Collector output
Capacitance
Ic=10*I
B
Current Gain-bandwidth
product,f
T
(MHz)
Saturation voltage (mV)
Cob,Capacitance (pF)
V
CE
=6V
V
BE
(sat)
2
10
3
10
2
10
f=1MHz
I
E
=0
V
CE
(sat)
2
10
1
10
1
10
1
10
0
10
1
10
2
10
3
10
4
10
0
10
0
10
1
10
2
10
3
10
0
10
10
-1
0
10
1
10
2
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-016,B
UTC D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R206-016,B
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