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ATF-531P8-TR1

Description
C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
CategoryDiscrete semiconductor    The transistor   
File Size132KB,16 Pages
ManufacturerHP(Keysight)
Websitehttp://www.semiconductor.agilent.com/
Environmental Compliance
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ATF-531P8-TR1 Overview

C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229

ATF-531P8-TR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSON
package instructionSMALL OUTLINE, S-PDSO-N8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage7 V
Maximum drain current (Abs) (ID)0.3 A
Maximum drain current (ID)0.3 A
FET technologyHIGH ELECTRON MOBILITY
highest frequency bandC BAND
JEDEC-95 codeMO-229
JESD-30 codeS-PDSO-N8
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment1 W
Minimum power gain (Gp)18.5 dB
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
Agilent ATF-531P8 High Linearity
Enhancement Mode
[1]
Pseudomorphic HEMT in
2x2 mm
2
LPCC
[3]
Package
Data Sheet
Features
• Single voltage operation
• High linearity and gain
• Low noise figure
Description
Agilent Technologies’s
ATF-531P8 is a single-voltage
high linearity, low noise
E-pHEMT housed in an 8-lead
JEDEC-standard leadless
plastic chip carrier (LPCC
[3]
)
package. The device is ideal as
a high linearity, low-noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
The thermally efficient package
measures only 2 mm x 2 mm x
0.75 mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85°C. All
devices are 100% RF & DC tested.
Note:
1. Enhancement mode technology employs a
single positive V
gs
, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin Connections and
Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
• Excellent uniformity in product
specifications
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Source
(Thermal/RF Gnd)
• Small package size:
2.0 x 2.0 x 0.75 mm
• Point MTTF > 300 years
[2]
• MSL-1 and lead-free
• Tape-and-reel packaging option
available
Bottom View
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
3Px
Top View
Pin 7 (Drain)
Pin 6
Pin 5
Specifications
2 GHz; 4V, 135 mA (Typ.)
• 38 dBm output IP3
• 0.6 dB noise figure
• 20 dB gain
• 10.7 dB LFOM
[4]
• 24.5 dBm output power at 1 dB gain
compression
Applications
• Front-end LNA Q1 and Q2 driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
• Driver amplifier for WLAN,
WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT
for other high linearity applications
Note:
Package marking provides orientation and
identification:
“3P” = Device Code
“x” = Date code indicates the month of
manufacture.

ATF-531P8-TR1 Related Products

ATF-531P8-TR1 ATF-531P8 ATF-531P8-BLK ATF-531P8-TR2
Description C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
Shell connection SOURCE SOURCE SOURCE SOURCE
highest frequency band C BAND C BAND C BAND C BAND
Number of components 1 1 1 1
Number of terminals 8 8 8 8
surface mount YES Yes YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Is it Rohs certified? conform to - conform to conform to
Parts packaging code SON - SON SON
package instruction SMALL OUTLINE, S-PDSO-N8 - SMALL OUTLINE, S-PDSO-N8 SMALL OUTLINE, S-PDSO-N8
Contacts 8 - 8 8
Reach Compliance Code unknow - unknow unknow
ECCN code EAR99 - EAR99 EAR99
Other features LOW NOISE - LOW NOISE LOW NOISE
Configuration SINGLE - SINGLE SINGLE
Minimum drain-source breakdown voltage 7 V - 7 V 7 V
Maximum drain current (Abs) (ID) 0.3 A - 0.3 A 0.3 A
Maximum drain current (ID) 0.3 A - 0.3 A 0.3 A
FET technology HIGH ELECTRON MOBILITY - HIGH ELECTRON MOBILITY HIGH ELECTRON MOBILITY
JEDEC-95 code MO-229 - MO-229 MO-229
JESD-30 code S-PDSO-N8 - S-PDSO-N8 S-PDSO-N8
Humidity sensitivity level 1 - 1 1
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE - SQUARE SQUARE
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum power consumption environment 1 W - 1 W 1 W
Minimum power gain (Gp) 18.5 dB - 18.5 dB 18.5 dB
Certification status Not Qualified - Not Qualified Not Qualified
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
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