2N2222AL-C datasheet, PDF - EEWORLD Datasheet

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2N2222AL-C: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size1MB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2N2222AL-C Overview

Transistor

2N2222AL-C Parametric

Parameter Name	Attribute value
Maker	SECOS
Reach Compliance Code	compliant
Base Number Matches	1

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2N2222A

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

NPN Plastic Encapsulated Transistor

FEATURE

Complementary PNP type available 2N2907A

G

H

TO-92

1

Emitter

2

Base

3

Collector

3

J

A

B

REF.

D

PACKAGING INFORMATION

Weight: 0.2056 g

2

Base

K

1

Emitter

E

C

F

A

B

C

D

E

F

G

H

J

K

Millimeter

Min.

Max.

4.40

4.70

4.30

4.70

12.70

-

3.30

3.81

0.36

0.56

0.36

0.51

1.27 TYP.

1.10

-

2.42

2.66

0.36

0.76

ABSOLUTE MAXIMUM RATINGS

(at T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current – Continuous

Collector Power Dissipation

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Ratings

75

40

6

600

625

+150, -55 ~ +150

Unit

V

mA

mW

℃

ELECTRICAL CHARACTERISTICS

(at T

A

= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEX

I

EBO

h

FE(1)

h

FE(2)

h

FE(3)*

V

CE(sat)(1) *

V

CE(sat)(2) *

V

BE(sat) *

t

d

t

r

t

s

t

f

T

Min.

75

40

6

-

100

40

42

-

300

Typ.

-

Max.

-

10

100

300

-

0.6

0.3

1.2

10

25

225

60

-

Unit

V

nA

Test Conditions

I

C

= 10uA, I

E

= 0

I

C

= 10mA, I

B

= 0

I

E

= 10uA, I

C

= 0

V

CB

= 60V, I

E

= 0

V

CE

= 60V, V

EB(Off)

= 3V

V

EB

= 3V, I

C

= 0

V

CE

= 10V, I

C

= 150mA

V

CE

= 10V, I

C

= 0.1mA

V

CE

= 10V, I

C

= 500mA

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Delay Time

Rise Time

Storage Time

Fall Time

Transition Frequency

V

nS

MHz

I

C

= 500mA, I

B

= 50mA

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

V

CC

= 30V, V

EB(Off)

= -0.5V, I

C

= 150mA,

I

B1

= 15mA

V

CC

= 30V, Ic = 150mA,

I

B1

= I

B2

= 15mA

V

CE

= 20V, I

C

= 20mA, f = 100MHz

* Pulse Test

CLASSIFICATION OF h

FE(1)

Rank

Range

01-June-2005 Rev. B

L

100 - 200

H

200 - 300

Page 1 of 3

2N2222AL-C Related Products

	2N2222AL-C	2N2222A-L-C	2N2222A-L	2N2222AL
Description	Transistor	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Transistor
Maker	SECOS	SECOS	SECOS	SECOS
Reach Compliance Code	compliant	compliant	compliant	compliant
Base Number Matches	1	1	1	1

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