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2N2222A-L

Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
CategoryDiscrete semiconductor    The transistor   
File Size1MB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Environmental Compliance
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2N2222A-L Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

2N2222A-L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSECOS
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)285 ns
Maximum opening time (tons)35 ns
Base Number Matches1
2N2222A
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
NPN Plastic Encapsulated Transistor
FEATURE
Complementary PNP type available 2N2907A
G
H
TO-92
1
Emitter
2
Base
3
Collector
Collector
3
J
A
B
REF.
D
PACKAGING INFORMATION
Weight: 0.2056 g
2
Base
K
1
Emitter
E
C
F
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
ABSOLUTE MAXIMUM RATINGS
(at T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
75
40
6
600
625
+150, -55 ~ +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)*
V
CE(sat)(1) *
V
CE(sat)(2) *
V
BE(sat) *
t
d
t
r
t
s
t
f
f
T
Min.
75
40
6
-
-
-
100
40
42
-
-
-
-
-
-
-
300
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
100
300
-
-
0.6
0.3
1.2
10
25
225
60
-
Unit
V
V
V
nA
nA
nA
Test Conditions
I
C
= 10uA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10uA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CE
= 60V, V
EB(Off)
= 3V
V
EB
= 3V, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 0.1mA
V
CE
= 10V, I
C
= 500mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Delay Time
Rise Time
Storage Time
Fall Time
Transition Frequency
V
V
V
nS
nS
nS
nS
MHz
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CC
= 30V, V
EB(Off)
= -0.5V, I
C
= 150mA,
I
B1
= 15mA
V
CC
= 30V, Ic = 150mA,
I
B1
= I
B2
= 15mA
V
CE
= 20V, I
C
= 20mA, f = 100MHz
* Pulse Test
CLASSIFICATION OF h
FE(1)
Rank
Range
01-June-2005 Rev. B
L
100 - 200
H
200 - 300
Page 1 of 3

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Reach Compliance Code compliant compliant compliant compliant
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