2N2222A-L-C datasheet, PDF - EEWORLD Datasheet

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2N2222A-L-C: DescriptionSmall Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,; CategoryDiscrete semiconductor The transistor; File Size1MB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/; Environmental Compliance

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2N2222A-L-C Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

2N2222A-L-C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SECOS
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Maximum off time (toff)	285 ns
Maximum opening time (tons)	35 ns
Base Number Matches	1

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2N2222A

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

NPN Plastic Encapsulated Transistor

FEATURE

Complementary PNP type available 2N2907A

G

H

TO-92

1

Emitter

2

Base

3

Collector

3

J

A

B

REF.

D

PACKAGING INFORMATION

Weight: 0.2056 g

2

Base

K

1

Emitter

E

C

F

A

B

C

D

E

F

G

H

J

K

Millimeter

Min.

Max.

4.40

4.70

4.30

4.70

12.70

-

3.30

3.81

0.36

0.56

0.36

0.51

1.27 TYP.

1.10

-

2.42

2.66

0.36

0.76

ABSOLUTE MAXIMUM RATINGS

(at T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current – Continuous

Collector Power Dissipation

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Ratings

75

40

6

600

625

+150, -55 ~ +150

Unit

V

mA

mW

℃

ELECTRICAL CHARACTERISTICS

(at T

A

= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEX

I

EBO

h

FE(1)

h

FE(2)

h

FE(3)*

V

CE(sat)(1) *

V

CE(sat)(2) *

V

BE(sat) *

t

d

t

r

t

s

t

f

T

Min.

75

40

6

-

100

40

42

-

300

Typ.

-

Max.

-

10

100

300

-

0.6

0.3

1.2

10

25

225

60

-

Unit

V

nA

Test Conditions

I

C

= 10uA, I

E

= 0

I

C

= 10mA, I

B

= 0

I

E

= 10uA, I

C

= 0

V

CB

= 60V, I

E

= 0

V

CE

= 60V, V

EB(Off)

= 3V

V

EB

= 3V, I

C

= 0

V

CE

= 10V, I

C

= 150mA

V

CE

= 10V, I

C

= 0.1mA

V

CE

= 10V, I

C

= 500mA

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Delay Time

Rise Time

Storage Time

Fall Time

Transition Frequency

V

nS

MHz

I

C

= 500mA, I

B

= 50mA

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

V

CC

= 30V, V

EB(Off)

= -0.5V, I

C

= 150mA,

I

B1

= 15mA

V

CC

= 30V, Ic = 150mA,

I

B1

= I

B2

= 15mA

V

CE

= 20V, I

C

= 20mA, f = 100MHz

* Pulse Test

CLASSIFICATION OF h

FE(1)

Rank

Range

01-June-2005 Rev. B

L

100 - 200

H

200 - 300

Page 1 of 3

2N2222A-L-C Related Products

	2N2222A-L-C	2N2222A-L	2N2222AL	2N2222AL-C
Description	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Transistor	Transistor
Maker	SECOS	SECOS	SECOS	SECOS
Reach Compliance Code	compliant	compliant	compliant	compliant
Base Number Matches	1	1	1	1

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