PIN Photodiodes
PNZ335
(PN335)
PIN Photodiode
Unit : mm
Not soldered 0.8 max.
For optical fiber
1.5±0.2
2.1±0.15
1.6±0.15
0.8±0.1
Features
High coupling capability suitable for plastic fiber
High quantum efficiency
12.8 min.
3.9±0.25
4.5±0.15
3.5±0.15
Flat side-view type package
High-speed response
(2.95)
2-1.2±0.3
2-0.45±0.15
1
2
2.54±0.2
0.45±0.15
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
100
–25 to +85
–30 to +100
Unit
V
mW
˚C
˚C
Active region
1: Anode
2: Cathode
Dimensions of detection area
1.0
0.86
A1
ø0.1
Unit : mm
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Acceptance half angle
*1
Symbol
I
D
I
L
λ
P
t
r
, t
f*2
C
t
θ
V
R
= 10V
Conditions
V
R
= 10V, L = 1000 lx
*1
V
R
= 10V
V
R
= 10V, R
L
= 50Ω
V
R
= 10V, f = 1MHz
Measured from the optical axis to the half power point
min
5
typ
0.1
8
850
2
6
70
max
10
Unit
nA
µA
nm
ns
pF
deg.
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Sig.IN
λ
P
= 800nm
50Ω
R
L
V
R
= 10V
(Input pulse)
Sig.OUT
(Output pulse)
t
d
t
r
t
f
90%
10%
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
;;;
;
;;;
;
Note) The part number in the parenthesis shows conventional part number.
1
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