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K7N321801M-HC150

Description
ZBT SRAM, 2MX18, 3.8ns, CMOS, PBGA119, BGA-119
Categorystorage    storage   
File Size317KB,28 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K7N321801M-HC150 Overview

ZBT SRAM, 2MX18, 3.8ns, CMOS, PBGA119, BGA-119

K7N321801M-HC150 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeBGA
package instructionBGA,
Contacts119
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time3.8 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B119
length22 mm
memory density37748736 bit
Memory IC TypeZBT SRAM
memory width18
Number of functions1
Number of terminals119
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX18
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
width14 mm
Base Number Matches1
K7N323601M
K7N321801M
Document Title
1Mx36 & 2Mx18-Bit Pipelined NtRAM
TM
1Mx36 & 2Mx18 Pipelined NtRAM
TM
Revision History
Rev. No.
0.0
0.1
0.2
History
1. Initial document.
1. Add 165FBGA package
1. Update JTAG scan order
2. Speed bin merge.
From K7N3236(18)09M to K7N3236(18)01M
3. AC parameter change.
tOH(min)/tLZC(min) from 0.8 to 1.5 at -25
tOH(min)/tLZC(min) from 1.0 to 1.5 at -22
tOH(min)/tLZC(min) from 1.0 to 1.5 at -20
1. Change pin out for 165FBGA
- x18/x36 ; 11B => from A to NC , 2R ==> from NC to A
1. Insert pin at JTAG scan order of 165FBGA in connection with
pin out change
- x18/x36 ; insert Pin ID of 2R to BIT number of 69
1. Add Icc, Isb, Isb1 and Isb2 values.
1. Final datasheet release.
1. Change the Stand-by current (Isb)
Before
After
Isb - 25 : 120
170
- 22 : 110
160
- 20 : 100
150
- 16 :
90
140
- 15 :
90
140
- 13 :
90
140
Isb1
:
90
110
Isb2
:
80
100
Draft Date
May. 10. 2001
Aug. 29. 2001
Dec. 31. 2001
Remark
Preliminary
Preliminary
Preliminary
0.3
Feb. 14. 2002
Preliminary
0.4
Apr. 20. 2002
Preliminary
0.5
1.0
1.1
May. 10. 2002
Sep. 26. 2002
Oct. 17, 2003
Preliminary
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Oct. 2003
Rev 1.1
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