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75321D

Description
N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Categorysemiconductor    Discrete semiconductor   
File Size224KB,10 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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75321D Overview

N-CHANNEL, Si, POWER, MOSFET, TO-251AA

HUF75321D3, HUF75321D3S
Data Sheet
December 2001
20A, 55V, 0.036 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75321.
Features
• 20A, 55V
• Simulation Models
- Temperature Compensating PSPICE® and SABER™
Models
- Thermal Impedance SPICE and SABER Models
Available on the web at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
HUF75321D3
HUF75321D3S
PACKAGE
TO-251AA
TO-252AA
BRAND
75321D
75321D
S
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-251AA variant in tape and reel, e.g., HUF75321D3ST.
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75321D3, HUF75321D3S Rev. B

75321D Related Products

75321D HUF75321D3 HUF75321D3S
Description N-CHANNEL, Si, POWER, MOSFET, TO-251AA N-CHANNEL, Si, POWER, MOSFET, TO-251AA N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it Rohs certified? - conform to conform to
Maker - Fairchild Fairchild
package instruction - IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code - _compli _compli
ECCN code - EAR99 EAR99
Shell connection - DRAIN DRAIN
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 55 V 55 V
Maximum drain current (Abs) (ID) - 20 A 20 A
Maximum drain current (ID) - 20 A 20 A
Maximum drain-source on-resistance - 0.036 Ω 0.036 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-251AA TO-252AA
JESD-30 code - R-PSIP-T3 R-PSSO-G2
JESD-609 code - e3 e3
Number of components - 1 1
Number of terminals - 3 2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 175 °C 175 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT APPLICABLE 260
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 93 W 93 W
Certification status - Not Qualified Not Qualified
surface mount - NO YES
Terminal surface - Matte Tin (Sn) Matte Tin (Sn)
Terminal form - THROUGH-HOLE GULL WING
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT APPLICABLE NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
Base Number Matches - 1 1
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