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HUF75321D3S

Description
N-CHANNEL, Si, POWER, MOSFET, TO-252AA
CategoryDiscrete semiconductor    The transistor   
File Size224KB,10 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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HUF75321D3S Overview

N-CHANNEL, Si, POWER, MOSFET, TO-252AA

HUF75321D3S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)20 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.036 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)93 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
HUF75321D3, HUF75321D3S
Data Sheet
December 2001
20A, 55V, 0.036 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75321.
Features
• 20A, 55V
• Simulation Models
- Temperature Compensating PSPICE® and SABER™
Models
- Thermal Impedance SPICE and SABER Models
Available on the web at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
HUF75321D3
HUF75321D3S
PACKAGE
TO-251AA
TO-252AA
BRAND
75321D
75321D
S
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-251AA variant in tape and reel, e.g., HUF75321D3ST.
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75321D3, HUF75321D3S Rev. B

HUF75321D3S Related Products

HUF75321D3S 75321D HUF75321D3
Description N-CHANNEL, Si, POWER, MOSFET, TO-252AA N-CHANNEL, Si, POWER, MOSFET, TO-251AA N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Is it Rohs certified? conform to - conform to
Maker Fairchild - Fairchild
package instruction SMALL OUTLINE, R-PSSO-G2 - IN-LINE, R-PSIP-T3
Reach Compliance Code _compli - _compli
ECCN code EAR99 - EAR99
Shell connection DRAIN - DRAIN
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V - 55 V
Maximum drain current (Abs) (ID) 20 A - 20 A
Maximum drain current (ID) 20 A - 20 A
Maximum drain-source on-resistance 0.036 Ω - 0.036 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA - TO-251AA
JESD-30 code R-PSSO-G2 - R-PSIP-T3
JESD-609 code e3 - e3
Number of components 1 - 1
Number of terminals 2 - 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 175 °C - 175 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - IN-LINE
Peak Reflow Temperature (Celsius) 260 - NOT APPLICABLE
Polarity/channel type N-CHANNEL - N-CHANNEL
Maximum power dissipation(Abs) 93 W - 93 W
Certification status Not Qualified - Not Qualified
surface mount YES - NO
Terminal surface Matte Tin (Sn) - Matte Tin (Sn)
Terminal form GULL WING - THROUGH-HOLE
Terminal location SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT APPLICABLE
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Base Number Matches 1 - 1
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