TRANSISTOR 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
| Parameter Name | Attribute value |
| Reach Compliance Code | compli |
| Avalanche Energy Efficiency Rating (Eas) | 45 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 600 V |
| Maximum drain current (Abs) (ID) | 1.9 A |
| Maximum drain current (ID) | 1.9 A |
| Maximum drain-source on-resistance | 6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 50 W |
| Maximum pulsed drain current (IDM) | 7.6 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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