S25FL004D0LNFI011 datasheet, PDF

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S25FL004D0LNFI011: Description4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface; Categorystorage storage; File Size480KB，36 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/; Environmental Compliance

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S25FL004D0LNFI011 Overview

4 Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface

S25FL004D0LNFI011 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SPANSION
Parts packaging code	SON
package instruction	HVSON,
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
Maximum clock frequency (fCLK)	50 MHz
JESD-30 code	R-XDSO-N8
JESD-609 code	e3
length	6 mm
memory density	4194304 bi
Memory IC Type	FLASH
memory width	1
Humidity sensitivity level	3
Number of functions	1
Number of terminals	8
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX1
Package body material	UNSPECIFIED
encapsulated code	HVSON
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	260
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	0.8 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
type	NOR TYPE
width	4.9 mm

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S25FL Family (Serial Peripheral Interface)

S25FL004D

4 Megabit CMOS 3.0 Volt Flash Memory

with 50 Mhz SPI Bus Interface

ADVANCE

INFORMATION

Distinctive Characteristics

ARCHITECTURAL ADVANTAGES

Single power supply operation

— Full voltage range: 2.7 to 3.6 V read and program

operations

Memory Architecture

— Eight sectors with 512 Kb each

Program

— Page Program (up to 256 bytes) in 1.5 ms (typical)

— Program cycles are on a page by page basis

Erase

— 0.5 s typical sector erase time

— 4 s typical bulk erase time

Endurance

— 100,000 cycles per sector typical

Data Retention

— 20 years typical

Device ID

— Electronic signature

Process Technology

— Manufactured on 0.25 µm process technology

Package Option

— Industry Standard Pinouts

— 8-pin SO (208mil) package

— 8-contact WSON leadless package (6x5mm)

PERFORMANCE CHARACTERISTICS

Speed

— 50 MHz clock rate (maximum)

Power Saving Standby Mode

— Standby Mode 1 µA (typical)

Memory Protection Features

Memory Protection

— W# pin works in conjunction with Status Register Bits

to protect specified memory areas

— Status Register Block Protection bits (BP1, BP0) in

status register configure parts of memory as read-

only

SOFTWARE FEATURES

SPI Bus Compatible Serial Interface

Publication Number

S25FL004D_00

Revision

Amendment

Issue Date

June 28, 2004

A d v a n c e

I n f o r m a t i o n

Table of Contents

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .5

Input/Output Descriptions . . . . . . . . . . . . . . . . . . . 5

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Ordering Information . . . . . . . . . . . . . . . . . . . . . . . .6

Signal Description . . . . . . . . . . . . . . . . . . . . . . . . . . .7

SPI Modes ...................................................................................................7

Figure 1. Bus Master and Memory Devices on the SPI Bus ....... 8

Figure 2. SPI Modes Supported............................................ 8

Page Program (PP) ................................................................................. 19

Figure 11. Page Program (PP) Instruction Sequence .............. 20

Sector Erase (SE) ..................................................................................20

Figure 12. Sector Erase (SE) Instruction Sequence ................ 21

Bulk Erase (BE) ....................................................................................... 21

Figure 13. Bulk Erase (BE) Instruction Sequence................... 22

Deep Power Down (DP) .................................................................... 22

Figure 14. Deep Power Down (DP) Instruction Sequence ........ 23

Release from Deep Power Down (RES) ....................................... 23

Figure 15. Release from Deep Power Down I

nstruction Sequence.......................................................... 24

Operating Features . . . . . . . . . . . . . . . . . . . . . . . . .9

Page Programming .................................................................................. 9

Sector Erase, or Bulk Erase ................................................................. 9

Polling During a Write, Program, or Erase Cycle ........................ 9

Status Register ......................................................................................... 9

Protection Modes ..................................................................................10

Table 1. Protected Area Sizes (S25FL004D). .........................10

Release from Deep Power Down and Read Electronic

Signature (RES) ...................................................................................... 24

Figure 16. Release from Deep Power Down and Read Electronic

Signature (RES) Instruction Sequence ................................. 25

Power-up and Power-down . . . . . . . . . . . . . . . . . . 26

Figure 17. Power-Up Timing ............................................... 27

Figure 18. Power-Down and Voltage Drop ............................ 27

Table 5. Power-Up Timing ................................................. 28

Hold Condition Modes ........................................................................10

Figure 3. Hold Condition Activation...................................... 11

Memory Organization . . . . . . . . . . . . . . . . . . . . . . 12

Table 2. Sector Address Table – S25FL004D .........................12

Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Table 3. Instruction Set. ....................................................13

Write Enable (WREN) ......................................................................... 14

Figure 4. Write Enable (WREN) Instruction Sequence............. 14

Initial Delivery State . . . . . . . . . . . . . . . . . . . . . . . 28

Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 28

Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 28

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 29

Table 6. DC Characteristics ............................................... 29

Write Disable (WRDI) ........................................................................ 14

Figure 5. Write Disable (WRDI) Instruction Sequence ............ 14

Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Figure 19. AC Measurements I/O Waveform ......................... 30

Table 7. Test Specifications ............................................... 30

Table 8. AC Characteristics ................................................ 31

Figure 20. SPI Mode 0 (0,0) Input Timing............................. 32

Figure 21. SPI Mode 0 (0,0) Output Timing .......................... 32

Figure 22. HOLD# Timing .................................................. 33

Figure 23. Write Protect Setup and Hold Timing during WRSR when

SRWD=1 ......................................................................... 33

Read Status Register (RDSR) ............................................................. 15

Figure 6. Read Status Register (RDSR)

Instruction Sequence ........................................................ 15

Figure 7. Status Register Format......................................... 15

Write Status Register (WRSR) .......................................................... 16

Figure 8. Write Status Register (WRSR)

Instruction Sequence ........................................................ 17

Table 4. Protection Modes ..................................................17

Read Data Bytes (READ) ....................................................................18

Figure 9. Read Data Bytes (READ) Instruction Sequence ........ 18

Read Data Bytes at Higher Speed (FAST_READ) ....................... 18

Figure 10. Read Data Bytes at Higher Speed

(FAST_READ) Instruction Sequence..................................... 19

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . 34

S08 wide—8-pin Plastic Small Outline 208mils Body Width

Package ................................................................................................... 34

8-Contact WSON (6mm x 5mm) Leadless Package .................35

Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . . 36

June 28, 2004 S25FL004D_00A0

S25FL Family (Serial Peripheral Interface) S25FL004D

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Is it Rohs certified?	conform to	incompatible	-	conform to	incompatible	-	conform to	-	conform to
Maker	SPANSION	SPANSION	-	SPANSION	SPANSION	-	SPANSION	-	SPANSION
Parts packaging code	SON	SOIC	-	SOIC	SOIC	-	SOIC	-	SON
package instruction	HVSON,	SOP, SOP8,.3	-	SOP, SOP8,.3	SOP, SOP8,.3	-	SOP, SOP8,.3	-	HVSON,
Contacts	8	8	-	8	8	-	8	-	8
Reach Compliance Code	compli	compli	-	compli	compli	-	compli	-	compli
ECCN code	EAR99	EAR99	-	EAR99	EAR99	-	EAR99	-	EAR99
Maximum clock frequency (fCLK)	50 MHz	50 MHz	-	50 MHz	50 MHz	-	50 MHz	-	50 MHz
JESD-30 code	R-XDSO-N8	S-PDSO-G8	-	S-PDSO-G8	S-PDSO-G8	-	S-PDSO-G8	-	R-XDSO-N8
JESD-609 code	e3	e0	-	e3	e0	-	e3	-	e3
length	6 mm	5.23 mm	-	5.23 mm	5.23 mm	-	5.23 mm	-	6 mm
memory density	4194304 bi	4194304 bi	-	4194304 bi	4194304 bi	-	4194304 bi	-	4194304 bi
Memory IC Type	FLASH	FLASH	-	FLASH	FLASH	-	FLASH	-	FLASH
memory width	1	1	-	1	1	-	1	-	1
Number of functions	1	1	-	1	1	-	1	-	1
Number of terminals	8	8	-	8	8	-	8	-	8
word count	4194304 words	4194304 words	-	4194304 words	4194304 words	-	4194304 words	-	4194304 words
character code	4000000	4000000	-	4000000	4000000	-	4000000	-	4000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	-	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	-	85 °C	85 °C	-	85 °C	-	85 °C
Minimum operating temperature	-40 °C	-40 °C	-	-40 °C	-40 °C	-	-40 °C	-	-40 °C
organize	4MX1	4MX1	-	4MX1	4MX1	-	4MX1	-	4MX1
Package body material	UNSPECIFIED	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	UNSPECIFIED
encapsulated code	HVSON	SOP	-	SOP	SOP	-	SOP	-	HVSON
Package shape	RECTANGULAR	SQUARE	-	SQUARE	SQUARE	-	SQUARE	-	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	-	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial	SERIAL	SERIAL	-	SERIAL	SERIAL	-	SERIAL	-	SERIAL
Peak Reflow Temperature (Celsius)	260	240	-	260	240	-	260	-	260
Programming voltage	3 V	3 V	-	3 V	3 V	-	3 V	-	3 V
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified
Maximum seat height	0.8 mm	2.03 mm	-	2.03 mm	2.03 mm	-	2.03 mm	-	0.8 mm
Maximum supply voltage (Vsup)	3.6 V	3.6 V	-	3.6 V	3.6 V	-	3.6 V	-	3.6 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	-	2.7 V	2.7 V	-	2.7 V	-	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V	-	3 V	3 V	-	3 V	-	3 V
surface mount	YES	YES	-	YES	YES	-	YES	-	YES
technology	CMOS	CMOS	-	CMOS	CMOS	-	CMOS	-	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	-	INDUSTRIAL	INDUSTRIAL	-	INDUSTRIAL	-	INDUSTRIAL
Terminal surface	MATTE TIN	TIN LEAD	-	MATTE TIN	TIN LEAD	-	MATTE TIN	-	MATTE TIN
Terminal form	NO LEAD	GULL WING	-	GULL WING	GULL WING	-	GULL WING	-	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	-	1.27 mm	1.27 mm	-	1.27 mm	-	1.27 mm
Terminal location	DUAL	DUAL	-	DUAL	DUAL	-	DUAL	-	DUAL
Maximum time at peak reflow temperature	40	30	-	40	30	-	40	-	40
type	NOR TYPE	NOR TYPE	-	NOR TYPE	NOR TYPE	-	NOR TYPE	-	NOR TYPE
width	4.9 mm	5.23 mm	-	5.23 mm	5.23 mm	-	5.23 mm	-	4.9 mm

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