2SB1201T datasheet, PDF - EEWORLD Datasheet

2SB1201T: DescriptionTRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252; CategoryDiscrete semiconductor The transistor; File Size124KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2SB1201T Overview

TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252

Parameter Name	Attribute value
Maker	ON Semiconductor
package instruction	,
Reach Compliance Code	compliant
Maximum collector current (IC)	2 A
Configuration	Single
Minimum DC current gain (hFE)	200
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	15 W
surface mount	YES
Base Number Matches	1

	2SB1201T	2SB1201U	2SD1801S	2SD1801U	2SB1201S
Description	TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252	TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252	TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),TO-252AA	TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),TO-252AA	TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252
Reach Compliance Code	compliant	compli	compli	compli	compli
Maximum collector current (IC)	2 A	2 A	2 A	2 A	2 A
Configuration	Single	Single	Single	Single	Single
Minimum DC current gain (hFE)	200	280	140	280	140
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	NPN	NPN	PNP
Maximum power dissipation(Abs)	15 W	15 W	0.8 W	0.8 W	15 W
surface mount	YES	YES	YES	YES	YES
Base Number Matches	1	1	1	1	1

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