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2SB1201S

Description
TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252
CategoryDiscrete semiconductor    The transistor   
File Size124KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2SB1201S Overview

TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252

2SB1201S Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)140
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)15 W
surface mountYES
Base Number Matches1

2SB1201S Related Products

2SB1201S 2SB1201U 2SD1801S 2SD1801U 2SB1201T
Description TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252 TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252 TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),TO-252AA TRANSISTOR,BJT,NPN,50V V(BR)CEO,2A I(C),TO-252AA TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252
Reach Compliance Code compli compli compli compli compliant
Maximum collector current (IC) 2 A 2 A 2 A 2 A 2 A
Configuration Single Single Single Single Single
Minimum DC current gain (hFE) 140 280 140 280 200
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP NPN NPN PNP
Maximum power dissipation(Abs) 15 W 15 W 0.8 W 0.8 W 15 W
surface mount YES YES YES YES YES
Base Number Matches 1 1 1 1 1

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