FPM2750QFN
L
OW
N
OISE
H
IGH
L
INEARITY
B
ALANCED
A
MPLIFIER
M
ODULE
F
EATURES
:
•
•
•
•
•
•
•
Balanced low noise amplifier module
Excellent Noise figure: 0.4dB at 1850MHz
Low drive current: 40mA typical (3.0V)
Combined IP3: 36dBm (100mA)
Combined P1dB: 23dBm (100mA)
Small footprint: 4mm x 4mm x 0.9mm QFN
RoHS compliant: (Directive 2002/95/EC)
Datasheet v2.5
P
ACKAGE
:
G
ENERAL
D
ESCRIPTION
:
The FPM2750QFN is a packaged pair of
pseudomorphic
High
Electron
Mobility
Transistors (pHEMT) specifically optimised for
balanced configuration systems. The Filtronic
0.25µm process ensures class-leading noise
performance.
The use of a small footprint
plastic package allows for a cost effective total
system implementation.
T
YPICAL
A
PPLICATIONS
:
•
•
Wireless infrastructure: Tower mounted
Amplifiers and front end LNAs for
EGSM/PCS/WCDMA/UMTS base stations
High intercept-point LNAs
E
LECTRICAL
S
PECIFICATIONS
(as measured on each device unless otherwise stated):
P
ARAMETER
Noise Figure
S
YMBOL
NF
C
ONDITIONS
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
M
IN
T
YP
0.4
0.6
32
M
AX
U
NITS
dB
Output IP3
in balanced mode
SSG in balanced mode
IP3
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
33
dBm
36
18.5
dB
SSG
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
17.5
20
21
dBm
P1dB in balanced mode
P1dB
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
21.5
23.5
19.0
19.5
17.5
17.5
dBm
dB
Small Signal Gain
SSG
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
Power at 1dB Gain Compression
P1dB
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
ΘJC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
≅
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75 mA
IGD = 0.75 mA
1W dissipation, case temperature 22°C
185
230
375
200
5
280
mA
mA
mS
μA
0.7
1.0
16
16
124
1.3
V
V
V
°C/W
Note: T
AMBIENT
= 22°; RF specification measured at f= 1850MHz using CW signal (except as noted).
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FPM2750QFN
Datasheet v2.5
A
BSOLUTE
M
AXIMUM
R
ATING
(
PER TRANSISTOR
)
1
:
P
ARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power (Note 2)
Channel Operating Temperature
Storage Temperature
Total Power Dissipation (Note 3)
Gain Compression
S
YMBOL
VDS
VGS
IDS
IG
PIN
TCH
TSTG
PTOT
Comp.
T
EST
C
ONDITIONS
A
BSOLUTE
M
AXIMUM
6V
-3V
For VDS < 2V
Forward or reverse current
Under any acceptable bias state
Under any acceptable bias state
Non-Operating Storage
See De-Rating Note below
Under any bias conditions
IDSS
7.5mA
150mW
175°C
-55°C to 150°C
1W
5dB
Notes:
1.
2.
3.
4.
5.
T
Ambient
= 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may
cause permanent damage to the device
RF Input must be further limited if input VSWR > 2.5:1
Total Power Dissipation is defined as: P
TOT
= P
DC
+ P
IN
– P
OUT
where P
DC
= DC Bias Power, P
IN
= RF Input Power, P
OUT
= RF Output Power
Total Power Dissipation shall be de-rated above 22°C as follows:
P
TOT
= (150 – T
CASE
) /
Θ
JC
W
where T
CASE
= Temperature of the thermal pad on the underside of the package
Θ
JC
increases linearly from 124°C/W at a T
CASE
of 22°C to 145°C/W at a T
CASE
of 145°C
Information on the mounting of QFN style packages for optimum thermal performance is available on
request.
B
IASING
G
UIDELINES
:
•
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage
supply for depletion-mode devices used in the FPM2750QFN
Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source
bias voltage, and such circuits provide some temperature stabilization for the device. A nominal
value for circuit development is 4
Ω
for a 50% of IDSS operating point.
For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. Class A/B
bias of 25-33% offers an optimised solution for NF and OIP3.
•
•
•
2
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FPM2750QFN
Datasheet v2.5
R
EFERENCE
D
ESIGN
1850MH
Z
(B
ALANCED
O
PERATION
):
Note: Package Schematic
Note: Evaluation board drawing available upon request.
BILL OF MATERIALS:
D
ESIGNATOR
C1, C2, C3, C4
C5, C6, C7, C8, C9, C17
C10, C18, C19, C20
C11, C12, C13, C14, C15,
C16
C25, C26, C27, C29
L1, L2, L3, L4
Q2
R1, R2
R3, R4, R5, R6
W1, W2
RF1, RF2
(V1, V2)
Evaluation board
S
UPPLIER
RS Components
RS Components
RS Components
RS Components
RS Components
RS Components
FILTRONIC
RS Components
RS Components
ANAREN
RS Components
RS Components
FILTRONIC
P
ART
N
UMBER
464-6587
464-6385
264-4602
464-6543
406-0006
484-1372
FPM2750QFN
213-2042
213-2143
1P503
363-4707
453-173
EBD15PA
D
ESCRIPTION
CAP-20pF-0805-+/-5%-50V(MIN)-LOW_ESR
CAP-10pF-0603-5%-50V-COG
CAP-22nF-0603-10%-50V
CAP-47nF-0603-+80/-20%-50V-Y5V
CAP-1uF-CASEB-20%-35V-TANT
IND-12nH-2012(0805)-5%-600mA-HQ
Dual FPD750-QFN4x4
RESIST-22ohm-1608(0603)-1%-0.1W
RESIST-100ohm-1608(0603)-1%-0.1W
HYBRID COUPLER
SMA Side Mount RF Connector
DC Connector (4 way)
31mil thick FR4
1/2 Ounce Cu on both sides
Q
UANTITY
4
6
4
6
4
4
1
2
4
2
2
2
1
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FPM2750QFN
Datasheet v2.5
R
EFERENCE
D
ESIGN
1850MH
Z
(S
INGLE
E
NDED
O
PERATION
):
Note: Package Schematic
Note: Evaluation board drawing available upon request.
BILL OF MATERIALS:
D
ESIGNATOR
C1, C2, C3, C4
C5, C6, C7, C8, C9, C17
C10, C18, C19, C20
C11, C12, C13, C14, C15,
C16
C25, C26, C27, C29
L1, L2, L3, L4
Q2
R1, R2
RF1, RF2, RF3, RF4
(V1, V2)
Evaluation board
S
UPPLIER
RS Components
RS Components
RS Components
RS Components
RS Components
RS Components
FILTRONIC
RS Components
RS Components
RS Components
FILTRONIC
P
ART
N
UMBER
464-6587
464-6385
264-4602
464-6543
406-0006
484-1372
FPM2750QFN
213-2042
363-4707
453-173
EBD12PA
D
ESCRIPTION
CAP-20pF-0805-+/-5%-50V(MIN)-LOW_ESR
CAP-10pF-0603-5%-50V-COG
CAP-22nF-0603-10%-50V
CAP-47nF-0603-+80/-20%-50V-Y5V
CAP-1uF-CASEB-20%-35V-TANT
IND-12nH-2012(0805)-5%-600mA-HQ
Dual FPD750-QFN4x4
RESIST-22ohm-1608(0603)-1%-0.1W
SMA Side Mount RF Connector
DC Connector (4 way)
31mil thick FR4
1/2 Ounce Cu on both sides
Q
UANTITY
4
6
4
6
4
4
1
2
4
2
1
4
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FPM2750QFN
Datasheet v2.5
T
YPICAL
M
EASURED
P
ERFORMANCE
O
N
E
VALUATION
B
OARD
: B
ALANCED
O
PERATION
Conditions: Vds = 3V, Ids = 40mA (per device), 50Ω environment and T
A
= +22
°C
unless stated
otherwise. All measurements shown are referenced to evaluation board connectors.
0.9
0.8
Input Return Loss (dB)
1.70
1.75
1.80
1.85
1.90
Freq (GHz)
1.95
2.00
0.7
0.6
NF (dB)
0.5
0.4
0.3
0.2
0.1
0.0
-50
1.0
2.0
3.0
Freq (GHz)
4.0
5.0
-10
-20
-30
-40
0
0
Output Return Loss (dB)
-10
-20
-30
-40
-50
-60
1.0
2.0
3.0
Freq (GHz)
4.0
5.0
Gain (dB)
21
20
19
18
17
16
15
14
13
1.80
1.85
1.90
Freq (GHz)
1.95
2.00
'-40 °C'
'20 °C'
'80 °C'
24
23
Output P1dB (dBm)
Output IP3 (dBm)
22
21
20
19
18
17
16
1.80
1.85
1.90
Freq (GHz)
1.95
2.00
'-40 °C'
'20 °C'
'80 °C'
38
36
34
32
30
28
26
1.80
1.85
1.90
Freq (GHz)
1.95
2.00
'-40 °C'
'20 °C'
'80 °C'
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
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