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2SK1589-A

Description
Small Signal Field-Effect Transistor, 0.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-59, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size399KB,6 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric Compare View All

2SK1589-A Overview

Small Signal Field-Effect Transistor, 0.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-59, 3 PIN

2SK1589-A Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeSC-59
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)0.1 A
Maximum drain-source on-resistance30 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
JESD-609 codee6
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2SK1589-A Related Products

2SK1589-A
Description Small Signal Field-Effect Transistor, 0.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-59, 3 PIN
Maker NEC Electronics
Parts packaging code SC-59
package instruction SMALL OUTLINE, R-PDSO-G3
Contacts 3
Reach Compliance Code unknown
ECCN code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V
Maximum drain current (ID) 0.1 A
Maximum drain-source on-resistance 30 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G3
JESD-609 code e6
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal surface TIN BISMUTH
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1

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