EEWORLDEEWORLDEEWORLD

Part Number

Search

2SK3480-S

Description
Power Field-Effect Transistor, 50A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, FIN CUT, MP-25, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size80KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric Compare View All

2SK3480-S Overview

Power Field-Effect Transistor, 50A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, FIN CUT, MP-25, 3 PIN

2SK3480-S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)116 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.036 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3480
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3480 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3480
2SK3480-S
2SK3480-ZJ
2SK3480-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
Super low on-state resistance:
R
DS(on)1
= 31 mΩ MAX. (V
GS
= 10 V, I
D
= 25 A)
R
DS(on)2
= 36 mΩ MAX. (V
GS
= 4.5 V, I
D
= 25 A)
Low C
iss
: C
iss
= 3600 pF TYP.
Built-in gate protection diode
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
100
±20
±50
±100
84
1.5
150
–55 to +150
34
116
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263, TO-220SMD)
(TO-262)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
10
µ
s, Duty cycle
1%
2.
Starting T
ch
= 25°C, R
G
= 25
Ω,
V
GS
= 20
0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
1.48
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15078EJ1V0DS00 (1st edition)
Date Published December 2001 NS CP(K)
Printed in Japan
©
2001

2SK3480-S Related Products

2SK3480-S 2SK3480-ZJ 2SK3480-Z
Description Power Field-Effect Transistor, 50A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, FIN CUT, MP-25, 3 PIN Power Field-Effect Transistor, 50A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN Power Field-Effect Transistor, 50A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-25Z, TO-220SMD, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible
Maker NEC Electronics NEC Electronics NEC Electronics
Parts packaging code TO-262AA D2PAK TO-220
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 116 mJ 116 mJ 116 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V
Maximum drain current (ID) 50 A 50 A 50 A
Maximum drain-source on-resistance 0.036 Ω 0.036 Ω 0.036 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 100 A 100 A 100 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
JEDEC-95 code TO-262AA TO-263AB -
Bian Que's Medical Skills
King Wen of Wei asked the famous doctor Bian Que, "You have three brothers, all of whom are skilled in medicine. Which one is the best?Bian Que replied: "The eldest brother is the best, the middle bro...
l380730475 Talking
Summary of Common FPGA Errors
...
至芯科技FPGA大牛 FPGA/CPLD
I would like to ask everyone, how should software engineers in electrical companies learn?
Why can't I find this online?...
而为人温柔 Industrial Control Electronics
VxWorks and Simulink real-time simulation, how to load the model .lo? (urgent)
After rtw is compiled, a .lo model is generated. How do you load the model .lo? When using loadModule to load, it always reports undefined symbol types... There are references that point out that the ...
andyye1630 Real-time operating system RTOS
CE5.0 input panel issues
1. How can I make the input panel immovable in CE5.0 application? 2. How can I show or hide the input panel and move the application window so that it is not blocked? 3. How can I add an input switch ...
wangzicc Embedded System
【TI's First Low Power Design Competition】 slotg(04): FRAM power-off data memory
This is a basic exercise for the MSP430FR5969 LaunchPad. It is programmed using the DriverLib library in CCS6. The board we designed needs to be powered off in many applications. For example, the mach...
slotg Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2888  2459  1177  398  844  59  50  24  8  17 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号