All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
r
ds(on)
C
iss
C
iss
t
d(on)
t
r
t
d(off)
t
f
5
45
22
7
1
12
2
Ω
pF
pF
ns
ns
ns
ns
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
100
–2
Min
– 25
Typ
– 40
– 0.1
–1
900
–7
Max
Unit
V
nA
mA
V
NJ903 Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= 1 nA
I
D
= 1 mA, V
GS
= Ø
V
DS
= ØV, V
GS
= – 10V
V
DS
= ØV, V
GS
= – 10V
V
DD
= 1.5V, I
D(ON)
= 30 mA
R
L
= 50
Ω,
V
GS(ON)
= ØV
V
GS(OFF)
= – 7V
f = 1 kHz
f = 1 MHz
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.co
Drain to Source Voltage in Volts
Temperature in
°C
Drain Saturation Current as a Function of V
GS(OFF)
Drain Source (on) Resistance in
Ω
Drain Saturation Current in mA
1000
800
600
400
200
10
8
6
4
2
R
DS(ON)
as a Function of V
GS(OFF)
0
–2
–4
–6
–8
0
–2
–4
–6
Gate Source Cutoff Voltage in Volts
Gate Source Cutoff Voltage in Volts
Input Capacitance as a Function of V
GS
80
Input Capacitance in pF
V
DS
= Ø V
60
V
DS
= 5 V
V
DS
= 15 V
40
Feedback Capacitance in pF
40
Feedback Capacitance as a Function of V
G
30
V
DS
= Ø V
V
DS
= 5 V
20
V
DS
= 15 V
20
10
0
–5
– 10
– 15
– 20
–5
– 10
– 15
Gate Source Voltage in Volts
Gate Source Voltage in Volts
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