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2SC1815

Description
TRANSISTOR 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size36KB,1 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
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2SC1815 Overview

TRANSISTOR 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal

2SC1815 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
Maximum collector current (IC)0.15 A
Collector-based maximum capacity4 pF
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
VCEsat-Max0.3 V
Base Number Matches1

2SC1815 Related Products

2SC1815 CS9015C
Description TRANSISTOR 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal TRANSISTOR 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
Maker National Semiconductor(TI ) National Semiconductor(TI )
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compliant unknown
Collector-based maximum capacity 4 pF 6 pF
Collector-emitter maximum voltage 50 V 40 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 25 200
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 80 MHz 100 MHz
VCEsat-Max 0.3 V 0.3 V

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