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SF20AG-T

Description
2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size138KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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SF20AG-T Overview

2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15

PART OBSOLETE – NO REPLACEMENT PARTS
SF20AG - SF20JG
2.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
Features
Glass Passivated Die Construction
Super-Fast Switching for High Efficiency
Surge Overload Rating to 60A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 4)
OBSOLETE – PART DISCONTINUED
Mechanical Data
Case: DO-15
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Tin. Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Type Number
Ordering Information: See Page 3
Weight: 0.35 grams (approximate)
DO-15
Dim
A
B
C
D
Min
25.40
5.50
0.686
2.60
Max
7.62
0.889
3.6
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
RMS Reverse Voltage
Average Rectified Output Current
@ T
A
= 75°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage (Note 5)
Reverse Recovery Time (Note 2)
Typical Total Capacitance (Note 3)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
θ
JA
T
j
,
T
STG
SF20 SF20 SF20 SF20 SF20 SF20 SF20 SF20
AG
BG
CG
DG
FG
GG
HG
JG
50
35
100
70
150
105
200
140
2.0
60
0.95
10
100
35
75
40
-65 to +150
40
50
50
1.3
1.5
300
210
400
280
500
350
600
420
Unit
V
V
A
A
V
µA
ns
pF
°
C/W
°C
@ I
F
= 2.0A
@ T
A
= 25°C
@ T
A
= 100°C
Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
RoHS revision 13.2.2003. High temperature solder exemption applied, see
EU Directive Annex Notes 5 and 7.
Short duration pulse test used to minimize self-heating effect.
SF20AG - SF20JG
Document number:
DS24013 Rev. 4 - 4
1 of 3
www.diodes.com
February 2015
© Diodes Incorporated

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