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BAS40T_1

Description
0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size62KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

BAS40T_1 Overview

0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAS40T_1 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionGREEN, ULTRA SMALL, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.1500 W
Diode typeSignal diode
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage40 V
Maximum average forward current0.2000 A
BAS40T/-04T/-05T/-06T
Lead-free
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
·
·
·
·
·
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Lead Free/RoHS Compliant (Note 3
)
B C
A
SOT-523
Dim
A
B
C
D
G
H
K
M
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
¾
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagrams Below
Marking: See Diagrams Below & Page 2
Weight: 0.002 grams (approximate)
Ordering Information, see Page 2
J
D
G
H
J
K
L
N
L
M
N
a
All Dimensions in mm
TOP VIEW
BAS40T Marking: 43
BAS40-04T Marking: 44
BAS40-05T Marking: 45
BAS40-06T Marking: 46
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient (Note 1)
Operating Temperature Range
Storage Temperature Range
@ t = 1.0s
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
P
d
R
qJA
T
j
T
STG
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
T
t
rr
Min
40
¾
¾
¾
¾
Max
¾
380
1000
200
5.0
5.0
Unit
V
mV
mV
nA
pF
ns
Test Condition
I
R
= 10mA
I
F
= 1.0mA, t
p
< 300ms
I
F
= 40mA, t
p
< 300ms
V
R
= 30V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
Value
40
28
200
600
150
833
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30265 Rev. 10 - 2
1 of 3
www.diodes.com
BAS40T/-04T/-05T/-06T
ã
Diodes Incorporated

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