BDW94/C PNP Epitaxial Silicon Transistor
January 2005
BDW94/C
PNP Epitaxial Silicon Transistor
Power Linear and Switching Application
• Power Darlington TR
• Complement to BDW93 and BDW93C Respectively
1
TO-220
2.Collector
3.Emitter
1.Base
Absolute Maximum Ratings
Symbol
V
CBO
Collector-Base Voltage
T
a
= 25°C unless otherwise noted
Parameter
: BDW94
: BDW94C
Value
-45
-100
-45
-100
-12
-15
-0.2
80
150
-65 ~ 150
Units
V
V
V
V
A
A
A
W
°C
°C
V
CEO
Collector-Emitter Voltage
: BDW94
: BDW94C
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector Current (DC)
Collector Current (Pulse) *
Base Current
Collector Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature
©2005 Fairchild Semiconductor Corporation
1
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BDW94/C Rev. B
BDW94/C PNP Epitaxial Silicon Transistor
Electrical Characteristics
Symbol
V
CEO(sus)
T
C
= 25°C unless otherwise noted
Parameter
Collector-Emitter Sustaining Voltage
: BDW94
: BDW94C
Collector Cut-off Current
: BDW94
: BDW94C
Conditions
I
C
= -100mA, I
B
= 0
Min.
-45
-100
Typ.
Max
Units
V
V
I
CBO
V
CB
= -45V, I
E
= 0
V
CB
= -100V, I
E
= 0
V
EB
= -45V, I
B
= 0
V
CE
= -100V, I
B
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -3V, I
C
= -3A
V
CE
= -3V, I
C
= -5A
V
CE
= -3V, I
C
= -10A
I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA
I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA
I
F
= -5A
I
F
= -10A
-1.3
-1.8
1000
750
100
-100
-100
-1
-1
-2
20000
-2
-3
-2.5
-4
-2
-4
µA
µA
mA
mA
mA
I
CEO
Collector Cut-off Current
: BDW94
: BDW94C
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain *
V
CE(sat)
V
BE(sat)
V
F
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Parallel Diode Forward Voltage *
V
V
V
V
V
V
* Pulse Test: PW = 300µs, Duty Cycle = 1.5% Pulsed
2
BDW94/C Rev. B
www.fairchildsemi.com
BDW94/C PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC Current Gain
100k
Figure 2. Collector-Emitter Saturation Voltage
-10
V
CE
= -3V
10k
V
CE
(sat) [V], SATURATION VOLTAGE
I
C
= 250 I
B
h
FE
, DC CURRENT GAIN
-1
1k
100
-0.1
-1
-10
-100
-0.1
-0.1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage
-20
1000
Figure 4. Output Capacitance
f=1MHz
I
E
=0
V
CE
= -3V
I
C
[A], COLLECTOR CURRENT
-16
-12
C
ob
[pF], CAPACTIANCE
100
-8
-4
-0
-0.0
-0.8
-1.6
-2.4
-3.2
-4.0
10
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Safe Operating Area
-100
Figure 6. Power Derating
120
I
C
[A], COLLECTOR CURRENT
100
I
C
MAX.
-10
5 ms 1 ms
100uS
P
C
[W], POWER DISSIPATION
-1000
80
DC
60
-1
40
BDW94
BDW94A
BDW94B
BDW94C
-0.1
-1
-10
-100
20
0
0
50
o
100
150
200
250
V
CE
[V], COLLECTOR EMITTER VOLTAGE
Tc [ C], CASE TEMPERATURE
3
BDW94/C Rev. B
www.fairchildsemi.com
BDW94/C PNP Epitaxial Silicon Transistor
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in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
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or system whose failure to perform can be reasonably expected
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affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
5
BDW94/C Rev. B
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