71V67903S80BQGI datasheet, PDF

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71V67903S80BQGI: DescriptionCache SRAM, 512KX18, 8ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165; Categorystorage storage; File Size975KB，23 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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71V67903S80BQGI Overview

Cache SRAM, 512KX18, 8ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165

71V67903S80BQGI Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IDT (Integrated Device Technology)
Parts packaging code	BGA
package instruction	TBGA, BGA165,11X15,40
Contacts	165
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	8 ns
Other features	FLOW-THROUGH ARCHITECTURE
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B165
JESD-609 code	e1
length	15 mm
memory density	9437184 bit
Memory IC Type	CACHE SRAM
memory width	18
Humidity sensitivity level	3
Number of functions	1
Number of terminals	165
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TBGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.07 A
Minimum standby current	3.14 V
Maximum slew rate	0.23 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	13 mm
Base Number Matches	1

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256K X 36, 512K X 18

IDT71V67703

3.3V Synchronous SRAMs

IDT71V67903

3.3V I/O, Burst Counter

Flow-Through Outputs, Single Cycle Deselect

Features

256K x 36, 512K x 18 memory configurations

Supports fast access times:

– 7.5ns up to 117MHz clock frequency

– 8.0ns up to 100MHz clock frequency

– 8.5ns up to 87MHz clock frequency

LBO

input selects interleaved or linear burst mode

Self-timed write cycle with global write control (GW byte write

GW),

enable (BWE and byte writes (BW

BWE),

BWx)

BWE

3.3V core power supply

Power down controlled by ZZ input

3.3V I/O supply (V

DDQ

)

Packaged in a JEDEC Standard 100-pin thin plastic quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball

grid array (fBGA).

Description

The IDT71V67703/7903 are high-speed SRAMs organized as

256K x 36/512K x 18. The IDT71V67703/7903 SRAMs contain write,

data, address and control registers. There are no registers in the data

output path (flow-through architecture). Internal logic allows the SRAM to

generate a self-timed write based upon a decision which can be left until

the end of the write cycle.

The burst mode feature offers the highest level of performance to the

system designer, as the IDT71V67703/7903 can provide four cycles of

data for a single address presented to the SRAM. An internal burst address

counter accepts the first cycle address from the processor, initiating the

access sequence. The first cycle of output data will flow-through from the

array after a clock-to-data access time delay from the rising clock edge of

the same cycle. If burst mode operation is selected (ADV=LOW), the

subsequent three cycles of output data will be available to the user on the

next three rising clock edges. The order of these three addresses are

defined by the internal burst counter and the

LBO

input pin.

The IDT71V67703/7903 SRAMs utilize IDT’s latest high-performance

CMOS process and are packaged in a JEDEC standard 14mm x 20mm

100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array

(BGA) and a 165 fine pitch ball grid array (fBGA).

Pin Description Summary

-A

Address Inputs

Chip Enable

Chip Selects

Output Enable

Global Write Enable

Byte Write Enable

Individual Byte Write Selects

Clock

Burst Address Advance

Address Status (Cache Controller)

Address Status (Processor)

Linear / Interleaved Burst Order

Sleep Mode

Data Input / Output

Core Power, I/O Power

Ground

Input

I/O

Supply

Synchronous

Asynchronous

Synchronous

N/A

Synchronous

Asynchronous

Synchronous

N/A

5309 tbl 01

BWE

(1)

CLK

ADV

ADSC

ADSP

LBO

I/O

-I/O

, I/O

-I/O

, V

DDQ

NOTE:

and

are not applicable for the IDT71V67903.

DECEMBER 2003

DSC-5309/05

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