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STB16NK60Z-S

Description
14 A, 620 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size121KB,10 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STB16NK60Z-S Overview

14 A, 620 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

STB16NK60Z-S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Code_compli
Avalanche Energy Efficiency Rating (Eas)360 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)14 A
Maximum drain current (ID)14 A
Maximum drain-source on-resistance0.42 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)190 W
Maximum pulsed drain current (IDM)56 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
STP16NK60Z - STB16NK60Z-S
STW16NK60Z
N-CHANNEL 600V - 0.38
Ω
- 14 A TO-220 /I2SPAK/TO-247
Zener - Protecdet SuperMESH™ MOSFET
TARGET SPECIFICATION
Table 1: General Features
TYPE
STP16NK60Z
STB16NK60Z-S
STW16NK60Z
Figure 1: Package
I
D
14 A
14 A
14 A
Pw
190 W
190 W
190 W
3
1
2
V
DSS
600 V
600 V
600 V
R
DS(on)
< 0.42
Ω
< 0.42
Ω
< 0.42
Ω
3
12
TYPICAL R
DS
(on) = 0.38
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
TO-220
I
2
SPAK
3
2
1
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES
Table 2: Order Codes
SALES TYPE
STP16NK60Z
STB16NK60Z-S
STW16NK60Z
MARKING
P16NK60Z
B16NK60Z
W16NK60Z
PACKAGE
TO-220
I
2
SPAK
TO-247
PACKAGING
TUBE
TUBE
TUBE
Rev. 1
September 2005
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice
.
1/10

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Description 14 A, 620 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 14 A, 620 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 14 A, 620 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 14 A, 620 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 14 A, 620 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 Cel 150 Cel 150 Cel 150 Cel
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Minimum breakdown voltage - 620 V 620 V 620 V 620 V
Processing package description - ROHS COMPLIANT, TO-220, 3 PIN ROHS COMPLIANT, TO-220, 3 PIN ROHS COMPLIANT, TO-220, 3 PIN ROHS COMPLIANT, TO-220, 3 PIN
each_compli - Yes Yes Yes Yes
EU RoHS regulations - Yes Yes Yes Yes
state - EOL EOL EOL EOL
Rated avalanche energy - 360 mJ 360 mJ 360 mJ 360 mJ
structure - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_ - 14 A 14 A 14 A 14 A
Maximum leakage current - 14 A 14 A 14 A 14 A
Maximum drain on-resistance - 0.4200 ohm 0.4200 ohm 0.4200 ohm 0.4200 ohm
field effect transistor technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
jedec_95_code - TO-220AB TO-220AB TO-220AB TO-220AB
jesd_30_code - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
jesd_609_code - e3 e3 e3 e3
moisture_sensitivity_level - NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Packaging Materials - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
eak_reflow_temperature__cel_ - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
larity_channel_type - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
wer_dissipation_max__abs_ - 190 W 190 W 190 W 190 W
Maximum leakage current pulse - 56 A 56 A 56 A 56 A
qualification_status - COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
sub_category - FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe FET General Purpose Power
terminal coating - TIN TIN TIN TIN
ime_peak_reflow_temperature_max__s_ - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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