MGFC39V3742A_04 datasheet, PDF

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MGFC39V3742A_04: Description3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET; File Size181KB，2 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET

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MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC39V3742A

3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC39V3742A is an internally impedance-matched

GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz

band amplifiers.The hermetically sealed metal-ceramic

package guarantees high reliability.

OUTLINE DRAWING

Unit : millimeters

21.0 +/-0.3

FEATURES

Class A operation

Internally matched to 50(ohm) system

High output power

P1dB = 8W (TYP.) @ f=3.7~4.2GHz

High power gain

GLP = 12 dB (TYP.) @ f=3.7~4.2GHz

High power added efficiency

P.A.E. = 31 % (TYP.) @ f=3.7~4.2GHz

Low distortion [ item -51 ]

IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.

2MIN

(1)

0.6 +/-0.15

12.9 +/-0.2

(2)

R-1.6

11.3

2MIN

(3)

10.7

17.0 +/-0.2

4.5 +/-0.4

item 01 : 3.7~4.2 GHz band power amplifier

item 51 : 3.7~4.2 GHz band digital radio communication

RECOMMENDED BIAS CONDITIONS

VDS = 10(V)

ID = 2.4 (A)

Rg = 50(ohm)

GF-8

0.2

QUALITY GRADE

1.6

12.0

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

Refer to Bias Procedure

(Ta=25 deg.C)

Ratings

-15

7.5

-20

42.8

175

-65 / +175

Unit

deg.C

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety

when making your circuit designs, with appropriate measures

such as (1)placement of substitutive, auxiliary circuits, (2)use of

non-flammable material or (3)prevention against any malfunction

or mishap.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VGDO

Gate to drain voltage

VGSO

Gate to source voltage

Drain current

IGR

Reverse gate current

IGF

Forward gate current

Total power dissipation *1

Tch

Channel temperature

Tstg

Storage temperature

*1 : Tc=25 deg.C

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

(Ta=25 deg.C)

Test conditions

Min.

-42

Limits

Typ.

39.5

-45

Max.

7.5

-4.5

3.5

Unit

dBm

dBc

deg.C/W

IDSS

Saturated drain current

VDS=3V, VGS=0V

Transconductance

VDS=3V, ID=2.2A

Gate to source cut-off voltage

VGS(off)

VDS=3V, ID=20mA

P1dB

Output power at 1dB gain compression

GLP

Linear power gain

VDS=10V, ID(RF off)=2.4A, f=3.7~4.2GHz

Drain current

P.A.E.

Power added efficiency

IM3

3rd order IM distortion

Rth(ch-c) Thermal resistance

Delta Vf method

*1 : item -51, 2 tone test, Po=28dBm Single Carrier Level, f=4.2GHz, Delta f=10MHz

*2 : Channel to case

MITSUBISHI

ELECTRIC

June/2004

2.6 +/-0.2

APPLICATION

0.1

MGFC39V3742A_04 Related Products

	MGFC39V3742A_04	MGFC39V3742A
Description	3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET	3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET

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