5.0mm x 6.0mm FULL COLOR LED LAMP
PRELIMINARY SPEC
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
DISCHARGE
SENSITIVE
DEVICES
Part Number: AAF5060PBESURVGA
BLUE
HYPER RED
GREEN
Features
OUTSTANDING MATERIAL EFFICIENCY.
RELIABLE AND RUGGED.
WATER CLEAR LENS.
LOW POWER CONSUMPTION.
ONE BLUE, ONE RED AND ONE GREEN CHIPS IN
ONE PACKAGE.
CAN PRODUCE ANY COLOR IN VISIBLE SPECTRUM,
INCLUDING WHITE LIGHT.
MOISTURE SENSITIVITY LEVEL : LEVEL 4.
RoHS COMPLIANT.
Description
The Blue source color devices are made with InGaN on SiC
Light Emitting Diode.
The Hyper Red source color devices are made with DH
InGaAlP on GaAs substrate Light Emitting Diode.
The Green source color devices are made with InGaN on
G-SiC Light Emitting Diode.
Static electricity and surge damage the LEDS.
It is recommended to use a wrist band or anti-electrostatic
glove when handling the LEDs.
All devices, equipment and machinery must be electrically
grounded.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the leads emerge from package.
4. Specifications are subject to change without notice.
SPEC NO: DSAG5859
APPROVED: J. Lu
REV NO: V.1
CHECKED: Allen Liu
DATE: JUN/22/2006
DRAWN: W.J.ZHU
PAGE: 1 OF 6
ERP: 1201002376
Selection Guide
Part No.
Dice
Lens Type
Iv (mcd) [2]
@30mA *50mA
Min.
BLUE (InGaN)
AAF5060PBESURVGA
HYPER RED (InGaAIP)
GREEN (InGaN)
WATER CLEAR
110
*380
180
Typ.
250
*500
350
100
°
Viewing
Angle [1]
2
θ
1/2
Notes:
1.
θ1/2
is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
2. *Luminous intensity with asterisk is measured at 50mA; Luminous intensity / luminous flux: +/-15%.
Electrical / Optical Characteristics at T
A
=25°C
Symbol
λpeak
Parameter
Peak Wavelength
Device
Blue
Hyper Red
Green
Blue
Hyper Red
Green
Blue
Hyper Red
Green
Blue
Hyper Red
Green
Blue
Hyper Red
Green
Blue
Hyper Red
Green
Typ.
465
640
520
470
628
525
25
27
35
110
45
100
3.7
1.9
3.2
4.3
2.5
4.0
10
10
10
Max.
Units
nm
Test Conditions
I
F
=20mA
λD
[1]
Dominant Wavelength
nm
I
F
=20mA
∆λ1/2
Spectral Line Half-width
nm
I
F
=20mA
C
Capacitance
pF
V
F
=0V;f=1MHz
V
F
[2]
Forward Voltage
V
I
F
=20mA
I
R
Reverse Current
uA
V
R
= 5V
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
Absolute Maximum Ratings at T
A
=25°C
Parameter
Power dissipation [1]
DC Forward Current
Peak Forward Current [2]
Reverse Voltage
Operating / Storage Temperature
Lead Solder Temperature [3]
Lead Solder Temperature [4]
Notes:
1. Within 350mW at all chips are lightened.
2. 1/10 Duty Cycle, 0.1ms Pulse Width.
3. 2mm below package base.
4. 5mm below package base.
Blue
Hyper Red
350
Green
Units
mW
30
160
5
50
185
5
-40°C To +85°C
50
100
5
mA
mA
V
260°C For 3 Seconds
260°C For 5 Seconds
SPEC NO: DSAG5859
APPROVED: J. Lu
REV NO: V.1
CHECKED: Allen Liu
DATE: JUN/22/2006
DRAWN: W.J.ZHU
PAGE: 2 OF 6
ERP: 1201002376
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