RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
| Parameter Name | Attribute value |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Maximum collector current (IC) | 0.05 A |
| Collector-based maximum capacity | 0.7 pF |
| Collector-emitter maximum voltage | 25 V |
| Configuration | SINGLE |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 650 MHz |
| Base Number Matches | 1 |
| MMBTH10L99Z | MPSH10D74Z | MPSH10D27Z | MMBTH10D87Z | MPSH10D75Z | MMBTH10S62Z | |
|---|---|---|---|---|---|---|
| Description | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92 | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92 | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92 | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, |
| Reach Compliance Code | unknow | compliant | compliant | unknown | compliant | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| Maximum collector current (IC) | 0.05 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
| Collector-based maximum capacity | 0.7 pF | 0.7 pF | 0.7 pF | 0.7 pF | 0.7 pF | 0.7 pF |
| Collector-emitter maximum voltage | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| highest frequency band | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G3 | O-PBCY-T3 | O-PBCY-T3 | R-PDSO-G3 | O-PBCY-T3 | R-PDSO-G3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | ROUND | ROUND | RECTANGULAR | ROUND | RECTANGULAR |
| Package form | SMALL OUTLINE | CYLINDRICAL | CYLINDRICAL | SMALL OUTLINE | CYLINDRICAL | SMALL OUTLINE |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | NO | NO | YES | NO | YES |
| Terminal form | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING |
| Terminal location | DUAL | BOTTOM | BOTTOM | DUAL | BOTTOM | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 650 MHz | 650 MHz | 650 MHz | 650 MHz | 650 MHz | 650 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - |
| Maker | - | Fairchild | Fairchild | - | Fairchild | Fairchild |
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