MMBTH10S62Z datasheet, PDF - EEWORLD Datasheet

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MMBTH10S62Z: DescriptionRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,; CategoryDiscrete semiconductor The transistor; File Size139KB，6 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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MMBTH10S62Z Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,

MMBTH10S62Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	0.7 pF
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	650 MHz

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Description	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
Reach Compliance Code	unknown	unknow	compliant	compliant	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
Collector-based maximum capacity	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF
Collector-emitter maximum voltage	25 V	25 V	25 V	25 V	25 V	25 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3	O-PBCY-T3	O-PBCY-T3	R-PDSO-G3	O-PBCY-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	ROUND	ROUND	RECTANGULAR	ROUND
Package form	SMALL OUTLINE	SMALL OUTLINE	CYLINDRICAL	CYLINDRICAL	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	NO	YES	NO
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	DUAL	DUAL	BOTTOM	BOTTOM	DUAL	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	650 MHz	650 MHz	650 MHz	650 MHz	650 MHz	650 MHz
Maker	Fairchild	-	Fairchild	Fairchild	-	Fairchild
Base Number Matches	-	1	1	1	1	-

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