DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DCR150-4
THRU
DCR150-8
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 200 to 600 Volts
CURRENT - 1.5 Amperes
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 200 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
o
o
Pinning
1 = Cathode, 2 = Gate, 3 = Anode
2 Typ
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Peak Repetitive Off-State
Voltage and Reverse Voltage
DCR150-4
DCR150-6
DCR150-8
Symbol
V
DRM
,
V
RRM
I
T(RMS)
I
TSM
I
GM
P
GM
P
G(AV)
T
J
T
STG
Rating
200
400
600
1.5
15
1.0
0.1
0.01
-40 to +110
-40 to +150
Unit
V
A
A
A
W
W
o
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
On-State RMS Current
(T
A
=57
o
C, 180
o
Conduction Angles)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60Hz)
Forward Peak Gate Current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
3 2 1
.148(3.76)
.132(3.36)
.050
Typ
o
o
5 Typ 5 Typ (1.27)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
Peak Repetitive Forward or Reverse
Off-State Blocking Current
Peak Forward On-State Voltage
Continuous DC Gate Trigger Current
Continuous DC Gate Trigger Voltage
DC Holding Current
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
T
J
=25 C
T
J
=110 C
o
o
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
25
3.5
75
Max
10
200
1.7
200
0.8
5.0
-
-
-
Unit
µA
V
µA
V
mA
V/µS
µsec
o
Test Conditions
V
AK
=Rated V
DRM
or V
RRM
R
GK
=1KΩ
I
TM
=1A Peak
V
AK
=7V DC, R
L
=100Ω
V
AK
=7V DC, R
L
=100Ω
R
GK
=1KΩ
R
GK
=1KΩ
I
GT
=10mA
-
I
DRM
, I
RRM
V
TM
I
GT
V
GT
I
H
dv/dt
T
gt
R
θJC
Critical Rate-of-Rise of Off-State Voltage
Gate Controlled Turn-on Time(t
D
+t
R
)
Thermal Resistance, Junction to Case
C/W
stm32/stm8
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