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HFA140NH60R

Description
140 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size224KB,5 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

HFA140NH60R Overview

140 A, SILICON, RECTIFIER DIODE

HFA140NH60R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionR-PUFM-X1
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.43 V
JESD-30 codeR-PUFM-X1
JESD-609 codee0
Maximum non-repetitive peak forward current800 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Maximum output current140 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse current80 µA
Maximum reverse recovery time0.14 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
PD -2.446 rev. B 03/99
HFA140NH60R
HEXFRED
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of
Recovery Parameters
TM
Ultrafast, Soft Recovery Diode
LUG
TERMINAL
CATHODE
V
R
= 600V
V
F
(typ.)
ƒ
= 1.3V
I
F(AV)
= 140A
d
a
Q
rr
(typ.) = 490nC
I
RRM
(typ.) = 9.3A
t
rr
(typ.) = 39ns
di
(rec)M
/dt (typ.)
ƒ
= 200A/µs
BASE ANODE
Description
HEXFRED
T M
diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
HALF-PAK
Absolute Maximum Ratings (per Leg)
Parameter
V
R
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FSM
E
AS
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current

Non-Repetitive Avalanche Energy
‚
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
193
96
800
220
521
208
-55 to +150
Units
V
A
µJ
W
°C
Thermal - Mechanical Characteristics
Parameter
R
thJC
R
thCS
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight
Mounting Torque
„
Terminal Torque
Vertical Pull
2 inch Lever Pull
Note:

Limited by junction temperature
‚
L = 100µH, duty cycle limited by max T
J
ƒ
125°C
Min.
––––
––––
––––
15 (1.7)
30 (3.4)
––––
––––
Typ.
––––
0.15
26 (0.9)
––––
––––
––––
––––
Max.
0.24
––––
––––
25 (2.8)
40 (4.6)
80
40
Units
°C/W
K/W
g (oz)
lbf•in
(N•m)
lbf•in
„
Mounting surface must be smooth, flat, free or burrs or other
protrusions. Apply a thin even film or thermal grease to mounting
surface. Gradually tighten each mounting bolt in 5-10 lbf•in steps
until desired or maximum torque limits are reached. Module
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