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BAW56W

Description
0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size43KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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BAW56W Overview

0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAW56W Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
Maximum non-repetitive peak forward current4 A
Maximum operating temperature150 °C
Maximum output current0.13 A
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time0.004 µs
surface mountYES
WTE
POWER SEMICONDUCTORS
BAW56W
Pb
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
!
!
!
!

High Conductance
Fast Switching
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose and Switching
Plastic Material – UL Recognition Flammability
Classification 94V-O
A
L
B
C
M
E
H
D
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-323
Min
Max
0.30
0.40
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.20
1.40
1.80
2.20
0.10
0.90
1.10
0.25
0.05
0.15
Mechanical Data
!
!
!
!
!
!
!
Case: SOT-323, Molded Plastic
K
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.006 grams (approx.)
Mounting Position: Any
Marking: JC
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
J
G
TOP VIEW
All Dimensions in mm
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Peak Forward Surge Current (Note 1)
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t < 1.0µs
Symbol
V
RM
V
RRM
V
RWM
V
R
I
F
I
O
I
FSM
P
d
R
JA
T
j
, T
STG
Value
100
75
300
150
2.0
200
625
-65 to +150
Unit
V
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol
V
F
I
R
C
j
t
rr
Min
Max
0.855
1.0
2.5
2.0
6.0
Unit
V
µA
pF
nS
Test Condition
@ I
F
= 10mA
@ I
F
= 50mA
@ V
R
= 75V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA,
I
RR
= 0.1 x I
R
, R
L
= 100
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.
BAW56W
1 of 4
© 2006 Won-Top Electronics

BAW56W Related Products

BAW56W BAW56W-T1 BAW56W_06
Description 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified? incompatible incompatible -
Maker Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. -
Reach Compliance Code unknow unknow -
Diode type RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 1.2 V 0.855 V -
Maximum non-repetitive peak forward current 4 A 2 A -
Maximum operating temperature 150 °C 150 °C -
Maximum output current 0.13 A 0.15 A -
Maximum repetitive peak reverse voltage 85 V 75 V -
Maximum reverse recovery time 0.004 µs 0.006 µs -
surface mount YES YES -
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