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BAW56W-T1

Description
0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size43KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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BAW56W-T1 Overview

0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAW56W-T1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.855 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Maximum non-repetitive peak forward current2 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
WTE
POWER SEMICONDUCTORS
BAW56W
Pb
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
!
!
!
!

High Conductance
Fast Switching
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose and Switching
Plastic Material – UL Recognition Flammability
Classification 94V-O
A
L
B
C
M
E
H
D
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-323
Min
Max
0.30
0.40
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.20
1.40
1.80
2.20
0.10
0.90
1.10
0.25
0.05
0.15
Mechanical Data
!
!
!
!
!
!
!
Case: SOT-323, Molded Plastic
K
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.006 grams (approx.)
Mounting Position: Any
Marking: JC
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
J
G
TOP VIEW
All Dimensions in mm
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Peak Forward Surge Current (Note 1)
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t < 1.0µs
Symbol
V
RM
V
RRM
V
RWM
V
R
I
F
I
O
I
FSM
P
d
R
JA
T
j
, T
STG
Value
100
75
300
150
2.0
200
625
-65 to +150
Unit
V
V
mA
mA
A
mW
K/W
°C
Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol
V
F
I
R
C
j
t
rr
Min
Max
0.855
1.0
2.5
2.0
6.0
Unit
V
µA
pF
nS
Test Condition
@ I
F
= 10mA
@ I
F
= 50mA
@ V
R
= 75V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA,
I
RR
= 0.1 x I
R
, R
L
= 100
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.
BAW56W
1 of 4
© 2006 Won-Top Electronics

BAW56W-T1 Related Products

BAW56W-T1 BAW56W BAW56W_06
Description 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified? incompatible incompatible -
Maker Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. -
Reach Compliance Code unknow unknow -
Diode type RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 0.855 V 1.2 V -
Maximum non-repetitive peak forward current 2 A 4 A -
Maximum operating temperature 150 °C 150 °C -
Maximum output current 0.15 A 0.13 A -
Maximum repetitive peak reverse voltage 75 V 85 V -
Maximum reverse recovery time 0.006 µs 0.004 µs -
surface mount YES YES -

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