C25A_06 datasheet, PDF - EEWORLD Datasheet

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C25A_06: Description25 A, 200 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size22KB，2 Pages; ManufacturerWon-Top Electronics Co., Ltd.; Websitehttps://www.wontop.com/

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C25A_06 Overview

25 A, 200 V, SILICON, RECTIFIER DIODE

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WTE

POWER SEMICONDUCTORS

C25A – C25K

Pb

25A AUTOMOTIVE CELL DIODE

Features

!

Diffused Junction

Low Leakage

Low Cost

High Surge Current Capability

Die Size 164 mil HEX

D

Anode

+

C

E

Mechanical Data

!

Case: Cell Diode Passivated with Silicon Rubber

Terminal: Copper Disc with Ag Plated

Polarity: Indicated by Large Disc On Cathode

Side, Add “R” Suffix to Indicate Reverse Polarity,

i.e. C25AR

Mounting Position: Any

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

B

C25

Dim

Min

Max

—

5.46

A

—

4.82

B

0.75

—

C

1.0

—

D

—

2.2

E

All Dimensions in mm

!

A

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

@T

C

= 150°C

Symbol

V

RRM

V

RWM

V

R

V

R(RMS)

I

O

C25A

@T

A

=25°C unless otherwise specified

C25B

C25D

C25G

C25J

C25K

Unit

50

100

200

400

600

800

V

35

70

140

25

280

420

560

V

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

Forward Voltage

Peak Reverse Current

At Rated DC Blocking Voltage

@I

F

= 50A

I

FSM

400

A

V

FM

1.08

V

@T

A

= 25°C

I

RM

3.0

µA

Typical Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

R

JA

T

J

, T

STG

1.8

-40 to +150

°C/W

°C

C25A – C25K

1 of 2

C25A_06 Related Products

	C25A_06	C25D	C25A	C25B	C25K	C25G	C25J
Description	25 A, 200 V, SILICON, RECTIFIER DIODE	25 A, 200 V, SILICON, RECTIFIER DIODE	25 A, 50 V, SILICON, RECTIFIER DIODE	25 A, 100 V, SILICON, RECTIFIER DIODE	25 A, 800 V, SILICON, RECTIFIER DIODE	25 A, 400 V, SILICON, RECTIFIER DIODE	25 A, 200 V, SILICON, RECTIFIER DIODE
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	-	compli	unknow	unknow	unknow	compli	compli
application	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	-	1.08 V	1.08 V	1.08 V	1.08 V	1.08 V	1.08 V
JESD-30 code	-	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Maximum non-repetitive peak forward current	-	400 A	400 A	400 A	400 A	400 A	400 A
Number of components	-	1	1	1	1	1	1
Phase	-	1	1	1	1	1	1
Number of terminals	-	2	2	2	2	2	2
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Maximum output current	-	25 A	25 A	25 A	25 A	25 A	25 A
Package body material	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	-	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Maximum repetitive peak reverse voltage	-	200 V	50 V	100 V	800 V	400 V	600 V
Maximum reverse current	-	3 µA	3 µA	3 µA	3 µA	3 µA	3 µA
surface mount	-	YES	YES	YES	YES	YES	YES
Terminal form	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	-	END	END	END	END	END	END
Maker	-	-	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.

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