C25G datasheet, PDF - EEWORLD Datasheet

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C25G: Description25 A, 400 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size22KB，2 Pages; ManufacturerWon-Top Electronics Co., Ltd.; Websitehttps://www.wontop.com/

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C25G Overview

25 A, 400 V, SILICON, RECTIFIER DIODE

C25G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Won-Top Electronics Co., Ltd.
Reach Compliance Code	compli
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.08 V
JESD-30 code	O-CEDB-N2
Maximum non-repetitive peak forward current	400 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	25 A
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	3 µA
surface mount	YES
Terminal form	NO LEAD
Terminal location	END

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WTE

POWER SEMICONDUCTORS

C25A – C25K

Pb

25A AUTOMOTIVE CELL DIODE

Features

!

Diffused Junction

Low Leakage

Low Cost

High Surge Current Capability

Die Size 164 mil HEX

D

Anode

+

C

E

Mechanical Data

!

Case: Cell Diode Passivated with Silicon Rubber

Terminal: Copper Disc with Ag Plated

Polarity: Indicated by Large Disc On Cathode

Side, Add “R” Suffix to Indicate Reverse Polarity,

i.e. C25AR

Mounting Position: Any

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

B

C25

Dim

Min

Max

—

5.46

A

—

4.82

B

0.75

—

C

1.0

—

D

—

2.2

E

All Dimensions in mm

!

A

Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

@T

C

= 150°C

Symbol

V

RRM

V

RWM

V

R

V

R(RMS)

I

O

C25A

@T

A

=25°C unless otherwise specified

C25B

C25D

C25G

C25J

C25K

Unit

50

100

200

400

600

800

V

35

70

140

25

280

420

560

V

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

Forward Voltage

Peak Reverse Current

At Rated DC Blocking Voltage

@I

F

= 50A

I

FSM

400

A

V

FM

1.08

V

@T

A

= 25°C

I

RM

3.0

µA

Typical Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

R

JA

T

J

, T

STG

1.8

-40 to +150

°C/W

°C

C25A – C25K

1 of 2

C25G Related Products

	C25G	C25A_06	C25D	C25A	C25B	C25K	C25J
Description	25 A, 400 V, SILICON, RECTIFIER DIODE	25 A, 200 V, SILICON, RECTIFIER DIODE	25 A, 200 V, SILICON, RECTIFIER DIODE	25 A, 50 V, SILICON, RECTIFIER DIODE	25 A, 100 V, SILICON, RECTIFIER DIODE	25 A, 800 V, SILICON, RECTIFIER DIODE	25 A, 200 V, SILICON, RECTIFIER DIODE
Is it Rohs certified?	incompatible	-	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Won-Top Electronics Co., Ltd.	-	-	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.	Won-Top Electronics Co., Ltd.
Reach Compliance Code	compli	-	compli	unknow	unknow	unknow	compli
application	GENERAL PURPOSE	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.08 V	-	1.08 V	1.08 V	1.08 V	1.08 V	1.08 V
JESD-30 code	O-CEDB-N2	-	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Maximum non-repetitive peak forward current	400 A	-	400 A	400 A	400 A	400 A	400 A
Number of components	1	-	1	1	1	1	1
Phase	1	-	1	1	1	1	1
Number of terminals	2	-	2	2	2	2	2
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Maximum output current	25 A	-	25 A	25 A	25 A	25 A	25 A
Package body material	CERAMIC, METAL-SEALED COFIRED	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	-	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Maximum repetitive peak reverse voltage	400 V	-	200 V	50 V	100 V	800 V	600 V
Maximum reverse current	3 µA	-	3 µA	3 µA	3 µA	3 µA	3 µA
surface mount	YES	-	YES	YES	YES	YES	YES
Terminal form	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	-	END	END	END	END	END

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