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C25J

Description
25 A, 200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size22KB,2 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric Compare View All

C25J Overview

25 A, 200 V, SILICON, RECTIFIER DIODE

C25J Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.08 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current25 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Maximum repetitive peak reverse voltage600 V
Maximum reverse current3 µA
surface mountYES
Terminal formNO LEAD
Terminal locationEND
WTE
POWER SEMICONDUCTORS
C25A – C25K
Pb
25A AUTOMOTIVE CELL DIODE
Features
!
!
!
!
!
Diffused Junction
Low Leakage
Low Cost
High Surge Current Capability
Die Size 164 mil HEX
D
Anode
+
C
E

Mechanical Data
!
!
!
Case: Cell Diode Passivated with Silicon Rubber
Terminal: Copper Disc with Ag Plated
Polarity: Indicated by Large Disc On Cathode
Side, Add “R” Suffix to Indicate Reverse Polarity,
i.e. C25AR
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 2
B
C25
Dim
Min
Max
5.46
A
4.82
B
0.75
C
1.0
D
2.2
E
All Dimensions in mm
!
!
A
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 150°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
C25A
@T
A
=25°C unless otherwise specified
C25B
C25D
C25G
C25J
C25K
Unit
50
100
200
400
600
800
V
35
70
140
25
280
420
560
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 50A
I
FSM
400
A
V
FM
1.08
V
@T
A
= 25°C
I
RM
3.0
µA
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
R
JA
T
J
, T
STG
1.8
-40 to +150
°C/W
°C
C25A – C25K
1 of 2
© 2006 Won-Top Electronics

C25J Related Products

C25J C25A_06 C25D C25A C25B C25K C25G
Description 25 A, 200 V, SILICON, RECTIFIER DIODE 25 A, 200 V, SILICON, RECTIFIER DIODE 25 A, 200 V, SILICON, RECTIFIER DIODE 25 A, 50 V, SILICON, RECTIFIER DIODE 25 A, 100 V, SILICON, RECTIFIER DIODE 25 A, 800 V, SILICON, RECTIFIER DIODE 25 A, 400 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible incompatible
Maker Won-Top Electronics Co., Ltd. - - Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd. Won-Top Electronics Co., Ltd.
Reach Compliance Code compli - compli unknow unknow unknow compli
application GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON - SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.08 V - 1.08 V 1.08 V 1.08 V 1.08 V 1.08 V
JESD-30 code O-CEDB-N2 - O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 400 A - 400 A 400 A 400 A 400 A 400 A
Number of components 1 - 1 1 1 1 1
Phase 1 - 1 1 1 1 1
Number of terminals 2 - 2 2 2 2 2
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C - -40 °C -40 °C -40 °C -40 °C -40 °C
Maximum output current 25 A - 25 A 25 A 25 A 25 A 25 A
Package body material CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND - ROUND ROUND ROUND ROUND ROUND
Package form DISK BUTTON - DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Maximum repetitive peak reverse voltage 600 V - 200 V 50 V 100 V 800 V 400 V
Maximum reverse current 3 µA - 3 µA 3 µA 3 µA 3 µA 3 µA
surface mount YES - YES YES YES YES YES
Terminal form NO LEAD - NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END - END END END END END
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