IDT71V35761YSA183BQ datasheet, PDF

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IDT71V35761YSA183BQ: DescriptionCache SRAM, 128KX36, 3.3ns, CMOS, PBGA165, FBGA-165; Categorystorage storage; File Size824KB，21 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT71V35761YSA183BQ Overview

Cache SRAM, 128KX36, 3.3ns, CMOS, PBGA165, FBGA-165

IDT71V35761YSA183BQ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	BGA
package instruction	FBGA-165
Contacts	165
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.A
Maximum access time	3.3 ns
Other features	PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)	183 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B165
JESD-609 code	e0
length	15 mm
memory density	4718592 bit
Memory IC Type	CACHE SRAM
memory width	36
Humidity sensitivity level	3
Number of functions	1
Number of terminals	165
word count	131072 words
character code	128000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TBGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.03 A
Minimum standby current	3.14 V
Maximum slew rate	0.34 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn63Pb37)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	13 mm
Base Number Matches	1

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128K x 36

IDT71V35761S/SA

3.3V Synchronous SRAMs

3.3V I/O, Pipelined Outputs

Burst Counter, Single Cycle Deselect

◆

Features

◆

128K x 36 memory configurations

Supports high system speed:

Commercial:

– 200MHz 3.1ns clock access time

Commercial and Industrial:

– 183MHz 3.3ns clock access time

– 166MHz 3.5ns clock access time

LBO

input selects interleaved or linear burst mode

3.3V core power supply

◆

Self-timed write cycle with global write control (GW), byte

write enable (BWE), and byte writes (BWx)

Power down controlled by ZZ input

3.3V I/O

Optional - Boundary Scan JTAG Interface (IEEE 1149.1

compliant)

Packaged in a JEDEC Standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine

pitch ball grid array

Green parts available, see ordering information

Functional Block Diagram

LBO

ADV

CEN

Burst

Sequence

INTERNAL

ADDRESS

CLK

ADSC

ADSP

CLK EN

Binary

Counter

CLR

Burst

Logic

17/18

A0*

A1*

128K x 36-

BIT

MEMORY

ARRAY

17/18

–A

0 -

16/17

BWE

ADDRESS

Byte 1

Write Register

Byte 1

Write Driver

Byte 2

Write Register

Byte 2

Write Driver

Byte 3

Write Register

Byte 3

Write Driver

Byte 4

Write Register

Byte 4

Write Driver

OUTPUT

Enable

CLK EN

DATA

INPUT

Powerdown

Enable

Delay

OUTPUT

BUFFER

I/O

— I/O

I/O

— I/O

5301 drw 01

TMS

TDI

TCK

TRST

(Optional)

JTAG

(SA Version)

TDO

NOVEMBER 2014

DSC-5301/07

IDT71V35761YSA183BQ Related Products

	IDT71V35761YSA183BQ	IDT71V35761YS166PF	IDT71V35761YSA166BQ	IDT71V35761YSA200BQ	IDT71V35761S166BQ8	IDT71V35761YS200PF	IDT71V35761S200BQG
Description	Cache SRAM, 128KX36, 3.3ns, CMOS, PBGA165, FBGA-165	Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100	Cache SRAM, 128KX36, 3.5ns, CMOS, PBGA165, FBGA-165	Cache SRAM, 128KX36, 3.1ns, CMOS, PBGA165, FBGA-165	Cache SRAM, 128KX36, 3.5ns, CMOS, PBGA165, FBGA-165	Cache SRAM, 128KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100	Cache SRAM, 128KX36, 3.1ns, CMOS, PBGA165, GREEN, FBGA-165
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Parts packaging code	BGA	QFP	BGA	BGA	BGA	QFP	BGA
package instruction	FBGA-165	14 X 20 MM, PLASTIC, TQFP-100	FBGA-165	FBGA-165	TBGA,	14 X 20 MM, PLASTIC, TQFP-100	TBGA,
Contacts	165	100	165	165	165	100	165
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	unknown	not_compliant	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	3.3 ns	3.5 ns	3.5 ns	3.1 ns	3.5 ns	3.1 ns	3.1 ns
Other features	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B165	R-PQFP-G100	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PQFP-G100	R-PBGA-B165
JESD-609 code	e0	e0	e0	e0	e0	e0	e1
length	15 mm	20 mm	15 mm	15 mm	15 mm	20 mm	15 mm
memory density	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
memory width	36	36	36	36	36	36	36
Number of functions	1	1	1	1	1	1	1
Number of terminals	165	100	165	165	165	100	165
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000	128000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	128KX36	128KX36	128KX36	128KX36	128KX36	128KX36	128KX36
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TBGA	LQFP	TBGA	TBGA	TBGA	LQFP	TBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.6 mm	1.2 mm	1.2 mm	1.2 mm	1.6 mm	1.2 mm
Maximum supply voltage (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	TIN LEAD	Tin/Lead (Sn85Pb15)	TIN SILVER COPPER
Terminal form	BALL	GULL WING	BALL	BALL	BALL	GULL WING	BALL
Terminal pitch	1 mm	0.65 mm	1 mm	1 mm	1 mm	0.65 mm	1 mm
Terminal location	BOTTOM	QUAD	BOTTOM	BOTTOM	BOTTOM	QUAD	BOTTOM
width	13 mm	14 mm	13 mm	13 mm	13 mm	14 mm	13 mm
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	-	incompatible	-
Maximum clock frequency (fCLK)	183 MHz	166 MHz	166 MHz	200 MHz	-	200 MHz	-
I/O type	COMMON	COMMON	COMMON	COMMON	-	COMMON	-
Humidity sensitivity level	3	3	3	3	-	3	-
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE	-
Encapsulate equivalent code	BGA165,11X15,40	QFP100,.63X.87	BGA165,11X15,40	BGA165,11X15,40	-	QFP100,.63X.87	-
Peak Reflow Temperature (Celsius)	225	240	225	225	-	240	-
power supply	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V	-
Maximum standby current	0.03 A	0.03 A	0.03 A	0.03 A	-	0.03 A	-
Minimum standby current	3.14 V	3.14 V	3.14 V	3.14 V	-	3.14 V	-
Maximum slew rate	0.34 mA	0.32 mA	0.32 mA	0.36 mA	-	0.36 mA	-
Maximum time at peak reflow temperature	20	20	20	20	-	20	-
Base Number Matches	1	1	1	1	1	-	-

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